參數(shù)資料
型號(hào): EN29LV640B-90BI
廠商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁(yè)數(shù): 31/53頁(yè)
文件大?。?/td> 495K
代理商: EN29LV640B-90BI
Flowchart 3. Embedded Erase
Flowchart 4. Embedded Erase
Command Sequence
(See the Command Definitions section for more information.)
Chip Erase
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
Sector Erase
2AAH/55H
555H/AAH
555H/80H
2AAH/55H
555H/AAH
555H/10H
555H/AAH
2AAH/55H
555H/80H
555H/AAH
2AAH/55H
Sector Address/30H
START
Write Erase
Command Sequence
Data Poll from
System or Toggle Bit
successfully
completed
Erase Done
Data =FFh
Yes
No
相關(guān)PDF資料
PDF描述
EN29LV640B-90BIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90BP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90T 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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