參數(shù)資料
型號(hào)： EN29LV512-90SI
廠(chǎng)商： Electronic Theatre Controls, Inc.
英文描述： 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
中文描述： 512千位（64K的× 8位）統(tǒng)一部門(mén)，3.0伏的CMOS只閃存
文件頁(yè)數(shù)： 1/35頁(yè)
文件大?。?/td> 403K
代理商： EN29LV512-90SI
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/01/05
EN29LV512
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
High performance
- Full voltage range: access times as fast as 55
ns
- Regulated voltage range: access times as fast
as 45ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
μ
A typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- Four 16 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
GENERAL DESCRIPTION
High performance program/erase speed
- Byte program time: 8μs typical
- Sector erase time: 500ms typical
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle bits
feature
Single Sector and Chip Erase
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
triple-metal double-poly triple-well CMOS Flash
Technology
Low Vcc write inhibit < 2.5V
>100K program/erase endurance cycle
Package options -
- 8mm x 20mm 32-pin TSOP (Type 1)
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
Commercial and industrial Temperature Range
The EN29LV512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory, organized
as 65,536 bytes. Any byte can be programmed typically in 8μs. The EN29LV512 features 3.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29LV512 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29LV512
512 Kbit (64K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
相關(guān)PDF資料
PDF描述
EN29LV512-90SIP 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-90TC 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-90TCP 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-90TI 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-90TIP 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
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EN29LV800CT-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash
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