參數(shù)資料
型號： EN29LV400AT-90BI
廠商： Electronic Theatre Controls, Inc.
英文描述： Replaced by PTH04070W :
中文描述： 4兆位（為512k × 8位/ 256 × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只
文件頁數(shù)： 1/41頁
文件大?。?/td> 771K
代理商： EN29LV400AT-90BI
Boot Sector Flash Memory, CMOS 3.0 Volt-only
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/01/07
EN29LV400A
EN29LV400A
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for compatibility with
high performance 3.3 volt microprocessors.
High performance
- Access times as fast as 45 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
μ
A typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- One 16 K-byte, two 8 K-byte, one 32 K-byte,
and seven 64 K-byte sectors (byte mode)
- One 8 K-word, two 4 K-word, one 16 K-word
and seven 32 K-word sectors (word mode)
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
GENERAL DESCRIPTION
High performance program/erase speed
- Byte/Word program time: 8μs typical
- Sector erase time: 500ms typical
JEDEC Standard Embedded Erase and
Program Algorithms
JEDEC standard DATA# polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
triple-metal double-poly triple-well CMOS
Flash Technology
Low Vcc write inhibit < 2.5V
minimum 1,000K program/erase endurance
cycle
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
Commercial and Industrial Temperature
Range
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8μs. The
EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain
a minimum of 100K program/erase cycles on each Sector.
相關(guān)PDF資料
PDF描述
EN29LV400AT-90BIP Replaced by PTH04070W :
EN29LV400AT-90TC Replaced by PTH04070W :
EN29LV400AB-45RBC 4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV400AB-45RBCP 4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV400AB-45RBI 4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29LV800AB-70TC 制造商:Eon Silicon Solution Inc 功能描述:
EN29LV800BB-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash
EN29LV800CT-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash
EN29SL400B-90BIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash
EN2-B1H1 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays
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