參數(shù)資料
型號(hào): EN29LV400AB-45RTI
廠商: Electronic Theatre Controls, Inc.
英文描述: 4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 4兆位(為512k × 8位/ 256 × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 35/41頁
文件大?。?/td> 771K
代理商: EN29LV400AB-45RTI
Figure 12. Sector Protect/Unprotect Timing Diagram
Notes:
Use standard microprocessor timings for this device for read and write cycles.
For Sector Protect, use A6=0, A1=1, A0=0. For Sector Unprotect, use A6=1, A1=1, A0=0.
Temporary Sector Unprotect
Parameter
Std
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/01/07
EN29LV400A
V
ID
SA,
A6,A1,A0
RESET#
0V
t
VIDR
t
VIDR
>1
μ
S
0V
CE#
WE#
OE#
Vcc
60h
60h
Valid
Verify
Sector Protect/Unprotect
Sector Protect: 150 uS
Sector Unprotect: 15 mS
>0.4
μ
S
40h
Status
Valid
Valid
Data
Speed Option
-55R
500
Unit
Ns
Description
-45R
-70
-90
t
VIDR
V
ID
Rise and Fall Time
RESET# Setup Time for Temporary
Sector Unprotect
Min
t
RSP
Min
4
μ
s
Figure 13. Temporary Sector Unprotect Timing Diagram
0 or 3 V
RESET#
RY/BY#
WE#
CE#
0 or 3 V
V
ID
t
RSP
t
VIDR
t
VIDR
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