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| 型號(hào)： | EN29LV320B-90BIP |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 32兆位（4096K × 8位/ 2048K x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁(yè)數(shù)： | 2/49頁(yè) |
| 文件大小： | 437K |
| 代理商： | EN29LV320B-90BIP |
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This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
10
EN29LV320
Rev. E, Issue Date: 2006/05/16
TABLE 3. OPERATING MODES
32M FLASH USER MODE TABLE
DQ8-DQ15
Operation
CE#
OE#
WE#
RESET
#
WP#/AC
C
A0-
A20
DQ0-
DQ7
BYTE#
= V
B
IHB
BYTE#
= V
B
ILB
Read
L
H
L/H
A
B
INB
D
B
OUTB
D
B
OUTB
Write
L
H
L
H
(Note 1)
A
B
INB
D
B
INB
D
B
INB
Accelerated
Program
L
H
L
H
V
B
HH
A
B
INB
D
B
INB
D
B
INB
DQ8-
DQ14=
High-Z,
DQ15 =
A-1
CMOS Standby
V
B
ccB ±
0.3V
X
V
B
ccB
±
0.3V
H
X
High-Z
TTL Standby
H
X
H
X
High-Z
Output Disable
L
H
L/H
X
High-Z
Hardware Reset
X
L
L/H
X
High-Z
Sector (Group)
Protect
L
H
L
V
B
IDB
L/H
SA,
A6=L,
A1=H,
A0=L
(Note 2)
X
Sector
Unprotect
L
H
L
V
B
IDB
(Note 1)
SA,
A6=H,
A1=H,
A0=L
(Note 2)
X
Temporary
Sector
Unprotect
X
V
B
IDB
(Note 1)
A
B
INB
(Note 2)
High-Z
L=logic low= V
B
ILB, H=Logic High= VBIHB, VBIDB =VBHH =11 ± 0.5V = 10.5-11.5V, X=Don’t Care (either L or H, but not floating ),
SA=Sector Addresses, D
B
INB=Data In, DBOUTB=Data Out, ABINB=Address In
Notes:
1. If WP#/ACC = V
B
IL B, the two outermost boot sectors remain protected. If WP# / ACC = VBIHB, the outermost boot sector
protection depends on whether they were last protected or unprotected. If WP#/ACC = V
B
HHB, all sectors will be
unprotected.
2. Please refer to “Sector/Sector Group Protection & Chip Unprotection”, Flowchart 7a and Flowchart 7b.
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