參數(shù)資料
型號: EN29LV320B-90BI
廠商: Eon Silicon Solution Inc.
英文描述: 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 32兆位(4096K × 8位/ 2048K x 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 37/49頁
文件大?。?/td> 437K
代理商: EN29LV320B-90BI
This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
42
EN29LV320
Rev. E, Issue Date: 2006/05/16
Figure 8. Alternate CE# Controlled Write Operation Timings
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
D
B
outB = array data read at VA
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
RESETt# shown to illustrate t
B
RHB measurement references. It cannot occur as shown during a valid command
sequence.
Figure 9. DQ2 vs. DQ6
tWC
tRH
tAS
tAH
tWH
tGHEL
tCPH
tCP
tWS
tDH
tDS
tBUSY
tCWHWH1 / tCWHWH2 / tCWHWH3
Status
DOUT
0xA0 for
Program
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
VA
Addresses
WE#
OE#
CE#
Data
RY/BY#
Reset#
PA for Program
SA for Sector Erase
0x555 for Chip Erase
0x555 for Program
0x2AA for Erase
WE#
DQ6
DQ2
Enter
Embedded
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Resume
Erase
Enter
Suspend
Read
Enter
Suspend
Program
Erase
Complete
Erase
Suspend
Read
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