參數(shù)資料
型號(hào)： EN29F800B55SI
廠商： Electronic Theatre Controls, Inc.
英文描述： FRONT PANEL ROTARY DRIVE (BRUSHLESS)
中文描述： 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 5.0伏，只
文件頁數(shù)： 1/38頁
文件大?。?/td> 221K
代理商： EN29F800B55SI
FEATURES
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
1
EN29F800
Rev. E, Issue Date: 2001/07/05
5.0V
±
10%, single power supply operation
- Minimizes system level power requirements
Manufactured on 0.32 μm process technology
High performance
- Access times as fast as 45 ns
Low power consumption
- 25 mA typical active read current
- 30 mA typical program/erase current
- 1 μA typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
and fifteen 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
High performance program/erase speed
- Byte program time: 10μs typical
GENERAL DESCRIPTION
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
Low Standby Current
- 1μA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program/erase current
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
0.32 μm double-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
>100K program/erase endurance cycle
48-pin TSOP (Type 1)
Commercial Temperature Range
The EN29F800 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized
as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10μs. The
EN29F800 features 5.0V voltage read and write operation, with access times as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29F800 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
(or
multiple) Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29F800
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 5.0 Volt-only
相關(guān)PDF資料
PDF描述
EN29F800B55T FOUR WAY DIVIDER
EN29F800B55TI POWER DIVIDER, SURFACE MOUNT REV
EN29F800T70S 122 x 32 pixel format, LED or EL Backlight available
EN29F800T70SI 122 x 32 pixel format, LED or EL Backlight available
EN29F800T70T 122 x 32 pixel format, LED or EL Backlight available
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29F800B55T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
EN29F800B55TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
EN29F800B70S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
EN29F800B70SI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
EN29F800B70T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
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