參數(shù)資料
型號(hào)： EN29F040-45P
廠商： Electronic Theatre Controls, Inc.
英文描述： 4 Megabit (512K x 8-bit) Flash Memory
中文描述： 4兆位（為512k × 8位）閃存
文件頁(yè)數(shù)： 1/32頁(yè)
文件大小： 223K
代理商： EN29F040-45P
FEATURES
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
1
EN29F040
Rev. D, Issue Date: 2001/07/05
5.0V operation for read/write/erase
operations
Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
Sector Architecture:
- 8 uniform sectors of 64Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within
individual sectors
High performance program/erase speed
-
Byte program time: 10μs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
Low Standby Current
- 1μA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program/erase current
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
0.35 μm double-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized
into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of
64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F040 features 5.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29F040 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (
W E
)
controls, which eliminate bus contention issues. This device is designed to allow either single
(or
multiple) Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29F040
4 Megabit (512K x 8-bit) Flash Memory
相關(guān)PDF資料
PDF描述
EN29F040-45PI 4 Megabit (512K x 8-bit) Flash Memory
EN29F040-45T 4 Megabit (512K x 8-bit) Flash Memory
EN29F040-45TI 4 Megabit (512K x 8-bit) Flash Memory
EN29F040-55J 4 Megabit (512K x 8-bit) Flash Memory
EN29F040-55JI 4 Megabit (512K x 8-bit) Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29F040-45PI 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4 Megabit (512K x 8-bit) Flash Memory
EN29F040-45T 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4 Megabit (512K x 8-bit) Flash Memory
EN29F040-45TI 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4 Megabit (512K x 8-bit) Flash Memory
EN29F040-55J 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4 Megabit (512K x 8-bit) Flash Memory
EN29F040-55JI 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4 Megabit (512K x 8-bit) Flash Memory
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