- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362697 > EN25P80 (Eon Silicon Solution Inc.) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | EN25P80 |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 5/30頁 |
| 文件大?。?/td> | 396K |
| 代理商： | EN25P80 |
第1頁第2頁第3頁第4頁當(dāng)前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
OPERATING FEATURES
SPI Modes
The EN25P80 is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK),
Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation Modes 0
(0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as shown in Figure
3, concerns the normal state of the SCK signal when the SPI bus master is in standby and data is not
being transferred to the Serial Flash. For Mode 0 the SCK signal is normally low. For Mode 3 the SCK
signal is normally high. In either case data input on the DI pin is sampled on the rising edge of the SCK.
Data output on the DO pin is clocked out on the falling edge of SCK.
Figure 3. SPI Modes
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2006/12/25
EN25P80
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and a
Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal
Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed at
a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of
memory.
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all 1s (FFh). This can be achieved either a sector at a time,
using the Sector Erase (SE) instruction, or throughout the entire memory, using the Bulk Erase (BE)
instruction. This starts an internal Erase cycle (of duration tSE or tBE). The Erase instruction must be
preceded by a Write Enable (WREN) instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE or BE)
can be achieved by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The Write In Progress
(WIP) bit is provided in the Status Register so that the application program can monitor its value, polling it
to establish when the previous Write cycle, Program cycle or Erase cycle is complete.
Active Power, Stand-by Power and Deep Power-Down Modes
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip Select
(CS#) is High, the device is disabled, but could remain in the Active Power mode until all internal cycles
have completed (Program, Erase, Write Status Register). The device then goes in to the Stand-by Power
mode. The device consumption drops to
I
CC1
.
The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down Mode
(DP) instruction) is executed. The device consumption drops further to
I
CC2
. The device remains in this
mode until another specific instruction (the Release from Deep Power-down Mode and Read Device ID
(RDI) instruction) is executed.
All other instructions are ignored while the device is in the Deep Power-down mode. This can be used as
an extra software protection mechanism, when the device is not in active use, to protect the device from
inadvertent Write, Program or Erase instructions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN25P80-50HC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50HCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50HI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50VC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50VCP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN25P80-50HC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:8 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50HCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:8 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50HI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:8 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50HIP | 制造商:EON SILICON SOLUTION INC 功能描述:8 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50VC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:8 Mbit Uniform Sector, Serial Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。