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參數(shù)資料
| 型號(hào)： | EN25P40-75HI |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 31/31頁 |
| 文件大?。?/td> | 441K |
| 代理商： | EN25P40-75HI |
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Revisions List
Revision No
Description
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. D, Issue Date: 2006/12/25
EN25P40
Date
A
B
Advance Information
1. Initial release
2. Correct OP-code of Read Manufacturer / Device ID
At page 19
1. Add op-code: 9Fh and its description
2. Add 3 specific op-codes to IDs in Table 5 of page 8
3. Change note 5 description in page 8
4. Change the description of FEATURES in page 1
(1)change byte program time from 8 to 7μs,
(2) add page program time: 1.4ms,
(3) change sector erase time from 500ms to 300 ms,
(4) change chip erase time from 4 sec to 2.4 sec in page 1,
5. Change Table 10 AC Characteristics in page 22
(1)change Data In Setup Time from 5ns to 2ns,
(2)change sector erase time from 0.5 sec to 0.3 sec typical,
(3) change sector erase time from 1 sec to 0.6 sec max,
(4)change bulk erase time from 4 sec to 2.4 sec typical
(5)change bulk erase time from 8 sec to 4.8 sec max in Table
6. Change ICC1, ICC2 in Table 8 from 10μA to 20μA
7. Add INSTRUCTIONS description in page 8
1. Change clock rate from 50MHz to 75MHz,
Page program time 1.4 ms typical to 1.5 ms typical
Sector erase time 300 ms typical to 800 ms
Chip erase time 2.4 seconds to 5 seconds typical
in page 1
2. Change Table 8 DC Characteristics in page 21
(1) Add ICC3 for 75MHz
3. Change Table 10 to 75MHz AC Characteristics in page 22
(1) Change F
R
from 50 to 75MHz
(2) Change
f
R
from 33 to 50MHz
(3) Change t
CLH
from 9ns to 6ns
(4) Change t
CLL
from 9ns to 6ns
(5) Change
t
SHQZ
from 9ns to 6ns
(6) Change
t
HLQZ
from 9ns to 6ns
(7) Change
t
HHQZ
from 9ns to 6ns
(8) Change
t
CLQV
from 9ns to 6ns
(9) Change Page program time 1.4ms typical to 1.5ms
(10) Change Sector erase time 0.3 / 0.6 seconds to 0.8 / 2
seconds for typical and maximum
(11) Change Chip erase time 2.4 / 4.8 seconds to 5 / 10
seconds for typical and maximum
4. Add Table 11: 50MHz AC Characteristics in page 23
(1) Change Page program time 1.4ms typical to 1.5ms
(2) Change Sector erase time 0.3 / 0.6 seconds to 0.8 / 2
seconds for typical and maximum
(3) Change Chip erase time 2.4 / 4.8 seconds to 5 / 10
seconds for typical and maximum
5. Add 75MHz option in Ordering Information in page 30
2005/12/20
2006/03/24
C
2006/08/04
D
2006/12/25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN25P40-75HIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75VC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75VCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75VI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75VIP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN25P40-75HIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75VC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75VCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75VI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75VIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
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