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參數資料
| 型號： | EN25P40-75GC |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數： | 16/31頁 |
| 文件大?。?/td> | 441K |
| 代理商： | EN25P40-75GC |
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Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest con-
sumption mode (the Deep Power-down mode). It can also be used as an extra software protection
mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program
and Erase instructions.
Driving Chip Select (CS#) High deselects the device, and puts the device in the Standby mode (if there is
no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep
Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, to reduce
the standby current (from I
CC1
to I
CC2
, as specified in Table 8.).
Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release
from Deep Power-down and Read Device ID (RDI) instruction. This releases the device from this mode.
The Release from Deep Power-down and Read Device ID (RDI) instruction also allows the Device ID of
the device to be output on Serial Data Output (DO).
The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in the
Standby mode. The Deep Power-down (DP) instruction is entered by driving Chip Select (CS#) Low,
followed by the instruction code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 14..Chip Select (CS#) must be driven High after the eighth bit
of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not
executed. As soon as Chip Select (CS#) is driven High, it requires a delay of t
DP
before the supply current
is reduced to I
CC2
and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in progress.
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. D, Issue Date: 2006/12/25
EN25P40
Release from Deep Power-down and Read Device ID (RDI)
相關PDF資料 |
PDF描述 |
|---|---|
| EN25P40-75GCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50HIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80 | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50HC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P80-50HCP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| EN25P40-75GCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75GI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75GIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75HC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-75HCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
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