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參數(shù)資料
| 型號(hào)： | EN25P40-50HC |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 13/31頁 |
| 文件大?。?/td> | 441K |
| 代理商： | EN25P40-50HC |
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This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. D, Issue Date: 2006/12/25
EN25P40
Page Program (PP) (02h)
The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least
significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the same page (from the address whose 8 least
significant bits (A7-A0) are all zero). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 11. If more than 256 bytes are sent to the device, previously
latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within
the same page. If less than 256 Data bytes are sent to device, they are correctly programmed at the
requested addresses without having any effects on the other bytes of the same page.
Chip Select (CS#) must be driven High after the eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Page Program cycle (whose duration is t
PP
) is
initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page
Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the
Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3.a and Table 3.b) is not executed.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN25P40-50HCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-50HI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-50HIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-50VC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-50VCP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN25P40-50HCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-50HI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-50HIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-50VC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P40-50VCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Uniform Sector, Serial Flash Memory |
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