參數(shù)資料
型號(hào)： EN25P32-75HI
廠商： Eon Silicon Solution Inc.
元件分類(lèi)： FLASH
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 10/34頁(yè)
文件大小： 467K
代理商： EN25P32-75HI
being driven Low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full
byte, nothing will happen and WEL will not be reset.
In the case of multi-byte commands of Page Program (PP), and Release from Deep Power Down
(RES ) minimum number of bytes specified has to be given, without which, the command will be
ignored.
In the case of Page Program, if the number of byte after the command is less than 4 (at least 1 data
byte), it will be ignored too. In the case of SE, exact 24-bit address is a must, any less or more will
cause the command to be ignored.
All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase
cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues
unaffected.
Table 4. Instruction Set
Instruction Name
Byte 1
Code
Read Status
Register
Write Status
Register
Read Data
03h
A23-A16
A15-A8
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/10/18
EN25P32
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
n-Bytes
Write Enable
Write Disable
06h
04h
05h
(S7-S0)(1)
continuous
(2)
01h
S7-S0
A7-A0
(D7-D0)
(Next byte)
continuous
(Next Byte)
continuous
continuous
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
Page Program
Sector Erase
02h
D8h
A23-A16
A15-A8
A7-A0
D7-D0
(Next byte)
A23-A16
A15-A8
A7-A0
Bulk Erase
C7h
Deep Power-down
B9h
(4)
Release from Deep
Power-down, and
read Device ID
Release from Deep
Power-down
Manufacturer/
Device ID
Read Identification
Enter OTP mode
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from
the device on the DO pin.
2. The Status Register contents will repeat continuously until CS# terminate the instruction.
3. All sectors may use any address within the sector.
4. The Device ID will repeat continuously until CS# terminate the instruction.
5. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminate the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
dummy
dummy
dummy
(ID7-ID0)
ABh
90h
dummy
dummy
00h(5)
(M7-M0)
(ID7-ID0)
9Fh
3Ah
(M7-M0)
(ID15-ID8)
(ID7-ID0)
相關(guān)PDF資料
PDF描述
EN25P32-75HIP 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75VC 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75VCP 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75VI 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75VIP 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN25P32-75HIP 制造商:EON 制造商全稱(chēng):Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75VC 制造商:EON 制造商全稱(chēng):Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75VCP 制造商:EON 制造商全稱(chēng):Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75VI 制造商:EON 制造商全稱(chēng):Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75VIP 制造商:EON 制造商全稱(chēng):Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
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