參數(shù)資料
型號(hào)： EN25P32-75FC
廠商： Eon Silicon Solution Inc.
元件分類： FLASH
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 17/34頁(yè)
文件大?。?/td> 467K
代理商： EN25P32-75FC
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration
is t
SE
) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check
the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect (BP2, BP1, BP0)
bits (see Table 3.a and Table 3.b) is not executed.
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/10/18
EN25P32
Bulk Erase (BE) (C7h)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 13.. Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Bulk Erase instruction is not executed. As
soon as Chip Select (CS#) is driven High, the self-timed Bulk Erase cycle (whose duration is t
BE
) is
initiated. While the Bulk Erase cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk Erase
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are 0. The Bulk
Erase (BE) instruction is ignored if one, or more, sectors are protected.
相關(guān)PDF資料
PDF描述
EN25P32-75FCP 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75FI 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75FIP 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75HC 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75HCP 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN25P32-75FCP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75FI 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75FIP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75HC 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-75HCP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
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