參數(shù)資料
型號： EN25P32-100HCP
廠商： Eon Silicon Solution Inc.
元件分類： FLASH
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 19/34頁
文件大小： 467K
代理商： EN25P32-100HCP
Release from Deep Power-down and Read Device ID (RDI)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the
Release from Deep Power-down and Read Device ID (RDI) instruction. Executing this instruction takes
the device out of the Deep Power-down mode.
Please note that this is not the same as, or even a subset of, the JEDEC 16-bit Electronic Signature that
is read by the Read Identifier (RDID) instruction. The old-style Electronic Signature is supported for
reasons of backward compatibility, only, and should not be used for new designs. New designs should,
instead, make use of the JEDEC 16-bit Electronic Signature, and the Read Identifier (RDID) instruction.
When used only to release the device from the power-down state, the instruction is issued by driving the
CS# pin low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 15. After the
time duration of t
RES1
(See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The CS# pin must remain high during the t
RES1
time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device
ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in
Figure 16. The Device ID value for the EN25P32 are listed in Table 5. The Device ID can be read
continuously. The instruction is completed by driving CS# high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was
not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate.
If the device was previously in the Deep Pow-er-down mode, though, the transition to the Standby Power
mode is delayed by t
RES2
, and Chip Select (CS#) must remain High for at least t
RES2
(max), as
specified in Table 10. Once in the Stand-by Power mode, the device waits to be selected, so that it can
receive, decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the
device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/10/18
EN25P32
相關(guān)PDF資料
PDF描述
EN25P32-100HI 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-100HIP 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-100VC 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-100VCP 4 Mbit Uniform Sector, Serial Flash Memory
EN25P32-100VI 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN25P32-100HI 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-100HIP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-100VC 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-100VCP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
EN25P32-100VI 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:32 Mbit Uniform Sector, Serial Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*