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參數(shù)資料
| 型號： | EN25P05-100GCP |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 15/30頁 |
| 文件大?。?/td> | 390K |
| 代理商： | EN25P05-100GCP |
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This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2006/12/27
EN25P05
Bulk Erase (BE) (C7h)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 13.. Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Bulk Erase instruction is not executed. As
soon as Chip Select (CS#) is driven High, the self-timed Bulk Erase cycle (whose duration is t
BE
) is
initiated. While the Bulk Erase cycle is in progress, the Status Register may be read to check the value of
the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk Erase cycle,
and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP1, BP0) bits are 0. The Bulk Erase
(BE) instruction is ignored if one, or more, sectors are protected.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN25P05-100GI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P05-100GIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P05-100VC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P05-100VCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P05-100VI | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN25P05-100GI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:512 Kbit Uniform Sector, Serial Flash Memory |
| EN25P05-100GIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:512 Kbit Uniform Sector, Serial Flash Memory |
| EN25P05-100VC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:512 Kbit Uniform Sector, Serial Flash Memory |
| EN25P05-100VCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:512 Kbit Uniform Sector, Serial Flash Memory |
| EN25P05-100VI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:512 Kbit Uniform Sector, Serial Flash Memory |
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