參數(shù)資料
型號: EMZ1DXV6T1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Dual General Purpose Transistors
中文描述: 100 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, CASE 463A-01, 6 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 63K
代理商: EMZ1DXV6T1
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. P0
1
Publication Order Number:
EMZ1DXV6/D
EMZ1DXV6T1,
EMZ1DXV6T5
Product Preview
Dual General Purpose
Transistors
NPN/PNP Dual (Complimentary)
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT563 which is designed for low
power surface mount applications.
LeadFree Solder Plating
Low V
CE(SAT)
,
0.5 V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
60
V
CollectorBase Voltage
V
CBO
50
V
EmitterBase Voltage
V
EBO
6.0
V
Collector Current Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
357
(Note 1)
2.9
(Note 1)
mW
mW/
°
C
Thermal Resistance,
Junction-to-Ambient
R
JA
350
(Note 1)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
500
(Note 1)
4.0
(Note 1)
mW
mW/
°
C
Thermal Resistance,
Junction-to-Ambient
R
JA
250
(Note 1)
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
1. FR4 @ Minimum Pad.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
SOT563
CASE 463A
PLASTIC
123
654
Q
1
(1)
(2)
(3)
(4)
(5)
(6)
Q
2
http://onsemi.com
3Z = Specific Device Code
D
= Date Code
MARKING DIAGRAM
3Z D
Device
Package
Shipping
ORDERING INFORMATION
EMZ1DXV6T1
SOT563
4 mm Pitch
4000/Tape & Reel
EMZ1DXV6T5
SOT563
2 mm Pitch
8000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
EMZ1DXV6T5 Dual General Purpose Transistors
EN241D-14A Z-TRAP ENE(Nominal varistor voltage 200 to 470V
EN271D-14A Pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 686-0023-1 00; No. of Positions: 40; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1; Terminal Pitch (mm): 1; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Double row; Crimping
EN271D-20A Pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 686-0042-6 00; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Female contact
EN221D-14A Z-TRAP ENE(Nominal varistor voltage 200 to 470V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EMZ1DXV6T1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistors
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EMZ1DXV6T5 功能描述:兩極晶體管 - BJT 100mA 50V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
EMZ1DXV6T5G 功能描述:兩極晶體管 - BJT 100mA 50V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
EMZ1T2R 功能描述:兩極晶體管 - BJT NPN/PNP 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2