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參數(shù)資料
| 型號： | EMX28 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Low frequency transistor, complex (2-elements) Bipolar Transistor |
| 中文描述： | 低頻晶體管，復(fù)雜（2元素）雙極晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | EMX28 |
EMX28
Transistors
Low frequency transistor,
complex (2-elements) Bipolar Transistor
EMX28
z
Structure
NPN Silicon Epitaxial Planar Transistor
z
Features
1) Two 2SD2696 dies are incorpolated in the EMT6 package.
2) Collector saturation voltage is low.
V
CE (sat)
: max. 300mA at I
C
= 100mA / I
B
= 2mA
z
Applications
General purpose small signal amplifier
z
Packaging specifications
z
Inner circuit
1/1
z
External dimensions
(Unit : mm)
Each lead has same dimensions
EMT6
0.22
1
1
(1) (2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
1pin mark
Abbreviated symbol : X28
(1)
(6)
(5)
(4)
(2)
(3)
Package
Code
Taping
T2R
8000
Basic ordering unit (pieces)
EMX28
Type
z
Absolute maximum ratings
(Ta=25
°
C)
<Tr1, Tr2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
1
2
V
V
V
V
CBO
V
CEO
V
EBO
Symbol
mA
mA
I
C
I
CP
mW / TOTAL
mW / ELEMENT
P
D
°
C
°
C
Tj
Tstg
Limits
30
30
6
400
800
150
120
Unit
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Pw
10ms, Single pulse
2 Each terminal mounted on a recommended land.
z
Electrical characteristics
(Ta=25
°
C)
<Tr1, Tr2>
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
150
55 to
+
150
Symbol
BV
CEO
CBO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
C
ob
Min.
30
30
6
270
Typ.
120
400
3.0
Max.
100
100
300
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
I
C
=1mA
I
C
=10
μ
A
I
E
=10
μ
A
V
CB
= 30V
V
EB
= 6V
I
C
=100mA, I
B
= 2mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
E
=
100mA, f=100MHz
V
CB
=10V, I
E
= 0A, f=1MHz
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