參數(shù)資料
型號(hào)： EMG4
廠商： Rohm CO.,LTD.
英文描述： General purpose (dual digital transistors)
中文描述： 通用（雙數(shù)字晶體管）
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 67K
代理商： EMG4
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N /
Transistors
FMG4A / IMH4A / IMH8A
General purpose (dual digital transistors)
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N
FMG4A / IMH4A / IMH8A
!
Features
1) Two DTC114T chips in a EMT or UMT or SMT package.
!
Equivalent circuits
EMH4 / UMH4N
(2)
(3)
R
1
R
1
EMG4 / UMG4N
R
1
R
1
UMH8N
(3)
R
1
R
1
IMH4A
(4)
R
1
R
1
FMG4A
R
1
R
1
IMH8A
(4)
R
1
R
1
(1)
(1)
(1)
(2)
(4) (5)
(6)
(6)
(5)
(3) (2)
(1)
(4)
(5)
(6)
(6)
(5)
(3)
(2)
(1)
(3)
(2)
(4)
(5)/(6)
(5)
(3)
(4)
(2)
(1)
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
50
50
5
100
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N
FMG4A / IMH4A / IMH8A
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
100
7
Typ.
250
250
10
Max.
0.5
0.5
0.3
600
13
Unit
V
V
V
μ
A
μ
A
V
MHz
k
Conditions
Transition frequency
Input resistance
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
I
C
/I
B
=
10mA/1mA
V
CE
=
5V, I
C
=
1mA
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
相關(guān)PDF資料
PDF描述
EMH4 General purpose (dual digital transistors)
EMG5 Emitter common (dual digital transistors)
EMG8 Emitter common (dual digital transistors)
EMG9 Emitter common (dual digital transistors)
EMH10 General purpose (dual digital transistors)
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