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參數(shù)資料
| 型號： | EMB3 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 57K |
| 代理商： | EMB3 |
EMB3 / UMB3N / IMB3A
Transistors
General purpose (dual digital transistors)
EMB3 / UMB3N / IMB3A
!
Features
1) Two DTA143T chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
!
Structure
Dual PNP digital transistor
(each with single built in resistor)
The following characteristics apply to both DTr
1
and DTr
2
.
!
Equivalent circuit
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
(6)
(4)
(5)
(6)
R
1
R
1
DTr
2
DTr
1
R
1
R
1
R
1
=4.7k
R
1
=4.7k
EMB3, UMB3N
IMB3A
!
Packaging specifications
Package
Taping
Code
UMB3N
EMB3
Type
IMB3N
TN
3000
T2R
8000
T110
3000
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
EMB3, UMB3N
IMB3A
Abbreviated symbol: B3
Abbreviated symbol: B3
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
Each lead has same dimensions
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
Limits
Unit
V
CBO
50
V
V
CEO
50
V
V
EBO
5
V
I
C
100
mA
Tj
150
°
C
Tstg
55~
+
150
°
C
P
C
EMB3,UMB3N
150 (TOTAL)
mW
IMB3A
300 (TOTAL)
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Collector power
dissipation
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