參數(shù)資料
型號(hào): EM6603SO24A
英文描述: Dual Synchronous Rectified MOSFET Drivers; Temperature Range: 0&degC to 70°C; Package: 16-QFN
中文描述: 微控制器
文件頁(yè)數(shù): 24/39頁(yè)
文件大小: 675K
代理商: EM6603SO24A
EM6603
03/02 REV. G/439
Copyright
2002, EM Microelectronic-Marin SA
30
www.emmicroelectronic.com
16 Electrical specifications
16.1 Absolute maximum ratings
min.
max.
unit
Supply voltage VDD-VSS
- 0.2
+ 3.6
V
Input voltage
VSS - 0.2
VDD+0.2
V
Storage temperature
- 40
+ 125
°C
Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond
specified electrical characteristics may affect device reliability or cause malfunction
.
16.2 Standard Operating Conditions
Parameter
value
Description
Temperature
-20°C...+85°C
VDD_range1
+1.4 ...+3.6V
With internal voltage regulator
VDD_range2 (Vreg = VDD) * +1.2 ...+1.8V
Without internal voltage regulator
VSS
0 V (reference)
CVreg
min. 100nF
regulated voltage capacitor tow. Vss
fq
32768 Hz
nominal frequency
Rqs
35 kOhm
typical quartz serial resistor
CL
8.2pF
typical quartz load capacitance
df/f
+/- 30 ppm
quartz frequency tolerance
16.3 Handling Procedures
This device has built-in protection against high static voltages or electric fields; however, anti-static precautions
should be taken as for any other CMOS component.
Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the
supply voltage range.
16.4
DC characteristics - Power Supply Pins
Vdd=Vreg=1.5V, T=25°C (note4) (unless otherwise specified)
Parameter
Conditions
Symb.
Min.
Typ.
(note1)
Max.
Unit
ACTIVE Supply Current
+25°C (note2)
IVDDa
1.8
3.0
A
ACTIVE Supply Current
(in active mode)
(note2) (note2)
-20°C...+85°C
IVDDa
4.5
A
STANDBY Supply Current
+25°C
IVDDh
0.35
0.6
A
STANDBY Supply Current
(in Halt mode)
(note3)
-20°C...+85°C
IVDDh
1.8
A
SLEEP Supply Current
+25°C
IVDDs
0.1
0.2
A
SLEEP Supply Current
(SLEEP =1)
(note3)
-20°C...+85°C
IVDDs
1.2
A
POR voltage
VPOR
0.7
1.1
V
RAM data retention
Vrd
1.1
V
Regulated Voltage
Vreg not at Vdd
Vreg
1.1
1.5
V
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