參數(shù)資料
型號(hào)： EM4450A5WS11
廠商： EM Microelectronic
英文描述： 1 KBit Read/Write Contactless Identification Device
中文描述： 1千位讀/寫(xiě)非接觸式識(shí)別裝置
文件頁(yè)數(shù)： 3/16頁(yè)
文件大小： 230K
代理商： EM4450A5WS11
EM4450
EM4550
Copyright
2003, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com
Absolute Maximum Ratings
Parameter
Maximum AC peak Current
induced on COIL1 and COIL2
Power Supply
Maximum Voltage other pads
Minimum Voltage other pads
Storage temperature
Electrostatic discharge
maximum
to MIL-STD-883C method
3015
Symbol
Conditions
I
COIL
± 30 mA
V
DD
V
max
V
min
T
store
-0.3 to 3.5 V
V
DD
+0.3V
V
SS
-0.3V
-55 to +125°C
V
ESD
2000V
Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified
operating conditions may affect device reliability or cause malfunction.
Handling Procedures
This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be
taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal
voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level.
Operating Conditions
Parameter
Operating Temperature
Maximum coil current
AC Voltage on Coil
Supply Frequency
Symbol Min
T
op
I
COIL
V
coil
f
coil
Max
+85
10
note 1
150
Unit
°C
mA
V
pp
kHz
-40
100
note 1
: Maximum voltage is defined by forcing 10mA on Coil1 - Coil2.
Electrical Characteristics
V
DD
=2.5V, V
SS
=0V , f
coil
= 125 kHz Sine wave , V
coil
= 1V
pp
, T
op
= 25°C , unless otherwise specified
Parameter
Symbol
Supply Voltage
V
DD
Minimum EEPROM write
voltage
Power Check EEPROM write
I
PWcheck
Supply current / read
I
rd
Suppy current / write
I
wr
Write mode (V
DD
= 2.8V)
V
(COIL1 - VSS)
& V
(COIL2 - VSS)
I
coil
= 100μA
V
(COIL1 - VSS)
& V
(COIL2 - VSS)
I
coil
= 5 mA
Monoflop
T
mono
Resonance Capacitor
C
r
Powercheck level
V
PWcheck
Power On Reset level high
V
prh
Clock extractor input min.
Clock extractor input max.
V
clkmax
Max. Voltage to detect modulation stop
EEPROM data endurance
N
cy
Erase all / Write all at V
DD
= 3.5 V
EEPROM retention
T
ret
Top = 55°C after 100'000 cycles (note 2)
Conditions
Min
2.3
Typ
Max
3.2
Unit
V
V
DDee
2
V
V
DD
= 2.8V
Read Mode
32
3
22
0.50
2.50
85
173.4
2.7
1.5
μ
A
μ
A
μ
A
V
V
μ
s
pF
V
V
V
pp
mV
pp
cycles
years
Modulator ON voltage drop
V
ON
35
166.6
2
1
0.25
170
Rising Supply
V
clkmin
Minimum Voltage for Clock Extraction
25
100'000
10
note 2
: Based on 1000 hours at 150°C
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