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參數(shù)資料
| 型號(hào)： | EM4150A6WW6E |
| 廠商： | EM Microelectronic |
| 英文描述： | 1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE |
| 中文描述： | 1千位讀/寫(xiě)非接觸式識(shí)別裝置 |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大?。?/td> | 386K |
| 代理商： | EM4150A6WW6E |
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R
EM4150
EM4350
Electrical Characteristics
V
DD
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp
, T
op
= 25°C unless otherwise stated
Parameter
Symbol
Test Conditions
Supply voltage
V
DD
Minimum EEPROM write
voltage
Power Check EEPROM write
I
PWcheck
V
DD
= 3V
Supply current / read
I
rd
Read Mode
Suppy current / write
I
wr
Write mode (V
DD
= 3V)
Modulator ON voltage drop
V
ON
V
(COIL1–Vss)
and V
(COIL2-Vss)
I
coil
= 100
μ
A
V
(COIL1–Vss)
and V
(COIL2-Vss)
I
coil
= 5mA
Resonance Capacitor
C
r
Power On Reset level high
V
prh
Rising Supply
Clock extractor input min.
V
clkmin
Minimum voltage for Clock Extraction
Clock extractor input max.
V
clkmax
Maximum voltage to detect modulation stop
EEPROM data endurance
N
cy
Erase all / Write all at V
DD
= 5V
EEPROM retention
T
ret
T
op
= 55°C after 100'000 cycles (Note 1)
Note 1:
Based on 1000 hours at 150°C
Timing Characteristics
V
DD
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp
, T
op
= 25°C unless otherwise stated
All timings are derived from the field frequency and are specified as a number of RF periods.
Parameters
Symbol
Copyright
2004, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com
Min
2.0
2.6
Typ
Max
5.5
Units
V
V
V
DDee
80
5.0
70
0.50
2.50
173.5
2.6
50
μ
A
μ
A
μ
A
V
V
pF
V
V
pp
mV
pp
cycles
years
3.0
40
166.5
1.0
100'000
10
170
2.0
Test conditions
Value
Units
Option : 64 clocks per bit
Read Bit Period
LIW/ACK/NACK pattern Duration
Read 1 Word Duration
Processing Pause Time
Write Access Time
Initialization Time
EEPROM write time
Option : 32 clocks per bit
Read Bit Period
LIW/ACK/NACK pattern Duration
Read 1 Word Duration
Processing Pause Time
Write Access Time
Initialization Time
EEPROM write time
Opt64
trdb
tpatt
trdw
tpp
twa
tinit
twee
Opt32
trdb
tpatt
trdw
tpp
twa
tinit
twee
including LIW
VDD = 3 V
including LIW
VDD = 3 V
64
320
3200
64
64
2112
3200
32
160
1600
32
32
1056
2624
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods represent periods of the carrier frequency emitted by the transciever unit. For example, if 125 kHz is used :
The Read bit period (Opt64) would be : 1/125'000*64 = 512 μs, and the time to read 1 word : 1/125'000*3200 = 25.6 ms.
The Read bit period (Opt32) would be : 1/125'000*32 = 256 μs, and the time to read 1 word : 1/125'000*1600 = 12.8 ms.
ATTENTION
Due to amplitude modulation of the coil-signal, the clock-extractor may miss clocks or add spurious clocks close
to the edges of the RF-envelope. This desynchronisation will not be larger than ±3 clocks per bit and must be
taken into account when developing reader software.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| EM4150A6WW7 | 制造商:EMMICRO 制造商全稱(chēng):EM Microelectronic - MARIN SA 功能描述:1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE |
| EM4150A6WW7E | 制造商:EMMICRO 制造商全稱(chēng):EM Microelectronic - MARIN SA 功能描述:1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE |
| EM4169 | 制造商:EMMICRO 制造商全稱(chēng):EM Microelectronic - MARIN SA 功能描述:128 bit Read/Write Contactless Identification Device with OTP function |
| EM4169A5WP11 | 制造商:EMMICRO 制造商全稱(chēng):EM Microelectronic - MARIN SA 功能描述:128 bit Read/Write Contactless Identification Device with OTP function |
| EM4169A5WP11E | 制造商:EMMICRO 制造商全稱(chēng):EM Microelectronic - MARIN SA 功能描述:128 bit Read/Write Contactless Identification Device with OTP function |
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