參數(shù)資料
型號(hào): EM4102A6WW11E
廠商: EM Microelectronic
英文描述: Read Only Contactless Identification Device
中文描述: 只讀非接觸識(shí)別裝置
文件頁數(shù): 3/7頁
文件大小: 142K
代理商: EM4102A6WW11E
R
EM4102
Electrical Characteristics
V
DD
= 1.5V, V
SS
= 0V,
V
C1
= 1.0V with positive peak at V
DD
and negative peak at V
DD
-1V unless otherwise specified
Parameter
Symbol Test Conditions
Supply Voltage
Rectified Supply Voltage
Coil1 - Coil2 Capacitance
Power Supply Capacitor
Manchester and biphase
versions
Supply Current
C2 pad Modulator ON
voltage drop
PSK version
Supply Current
C2 pad Modulator ON
voltage drop
with ref. to V
DD
Note 1) The maximum voltage is defined by forcing 10mA on COIL1 - COIL2
Note 2) The tolerance of the resonant capacitor is ± 15% over the whole production.
On a wafer basis, the tolerance is ± 2%
Timing Characteristics
V
DD
= 1.5V, V
SS
= 0V, f
coil
= 134kHz square wave, T
a
= 25°C
V
C1
= 1.0V with positive peak at V
DD
and negative peak at V
DD
-1V unless otherwise specified
Timings are derived from the field frequency and are specified as a number of RF periods.
Parameter
Symbol
Read Bit Period
T
rdb
Copyright 2005, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com
f
C1
= 134kHz square wave, T
a
= 25°C
Min.
1.5
1.5
Typ.
78
2)
125
Max.
1)
Units
V
V
pF
pF
V
DD
V
DDREC
C
res
C
sup
V
COIL1
- V
COIL2
= 2.8 VDC
Modulator switch = “ON”
V
coil
=100mVRMS f=10kHz
I
DD
V
ONC2
I
DDPSK
V
ONC2PSK
V
DD
=5.0V I
VDDC2
=1mA
with ref. to V
DD
V
DD
=5.0V I
VDDC2
=100μA
150
500
0.6
220
0.9
650
1.5
280
2.0
800
μA
mV
μA
mV
Test Conditions
depending on option
Value
64, 32, 16
Units
RF periods
Timing Waveforms
BIT n
BIT n+1
BIT n+2
64, 32 or 16 T
OC
, depending on option
T
OC
COIL1
Serial Data Out
Fig. 4
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