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參數資料
| 型號： | EM4069B5WW7 |
| 廠商： | EM Microelectronic |
| 英文描述： | 128 bit Read/Write Contactless Identification Device with OTP function |
| 中文描述： | 128位讀/寫非接觸識別裝置的OTP功能 |
| 文件頁數： | 2/15頁 |
| 文件大?。?/td> | 270K |
| 代理商： | EM4069B5WW7 |
EM4069
EM4169
Copyright
2003, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
Absolute Maximum Ratings
V
SS
= 0V
Parameter
Symbol
Conditions
Power supply
Input Voltage (pads TST,
TCP, TIO)
V
DD
-0.3 to +5.5V
- 0.3 to
VDD+0.3V
-30 to
+30mA
-10 to +10V
-55 to
+125°C
V
PIN
Input current on COIL1
I
COIL1
Input voltage on COIL1
V
COIL1
Storage temperature
T
STORE
Electrostatic discharge to
MIL-STD-883C method 3015
V
ESD
1000V
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond
specified electrical characteristics may affect device
reliability or cause malfunction.
Electrical
guaranteed when the circuit is exposed to light.
parameters
and
functionality
are
not
Handling Procedures
This device has built-in protection against high static
voltages or electric fields. However due to the unique
properties of this device, anti-static precautions should
be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur
when all terminal voltages are kept within the supply
voltage range.
Operating Conditions
V
= 0V
Parameter
Operating temperature
AC voltage on coil 1
Maximum coil current
Frequency on coil 1
Symbol
T
OP
V
COIL1
I
COIL1
F
COIL1
Min.
-40
Typ.
+25
*
Max. Units
+85
-10
100
125
10
150
°C
Vpp
mA
kHz
*) Maximum voltage is defined by forcing 10mA on
Coil1 – Vss
Electrical Characteristics
Unless otherwise specified: V
DD
= 1.0V to 5.5V, T
A
=-40 to +125°C.
Parameter
Regulated Supply Voltage
Reg. Voltage reading EEPROM (note 3)
Supply current in read mode
Reg. Voltage writing EEPROM
Supply current write mode
Power Check Voltage
Modulator ON voltage drop
Modulator ON voltage drop
POR level
Clock extractor
Peak detector threshold.
Peak detector hysteresis
Resonance capacitor (note 1)
EEPROM data retention (note 2)
EEPROM write cycles
Symbol
V
DD
V
RD
I
RD
V
WR
I
WR
V
PC
V
on1
V
on2
V
POR
V
COIL1
V
pd
V
pdh
C
R
T
RET
N
CY
Condition
I
COIL1
= 10mA
Min.
3.0
2.0
Typ.
3.5
Max.
4.0
Units
V
V
μ
A
V
μ
A
V
V
V
V
V
PP
V
PP
mV
pF
years
cycles
3.8
5,5
2.5
V
DD
= 3.5 V
50
2.8
1.45
3.6
1.85
100
3.15
1.75
4.5
2.20
2.4
1.2
3
1.5
0.5
3.2
20
I
COIL1
=
±
100
A
I
COIL1
=
±
1 mA
Rising edge
V
DD
= 3.3 V
V
DD
= 3.3 V
32 kHz, 0.3Vpp
T
OP
= 55°C
V
DD
= 3.6 V
4
4.6
200
100
78
10
100000
Note 1:
Value of the resonance capacitor may vary in limits of
±
12%
Statistics show a variation of capacitance within one lot of
±
5%.
These figures are given as information only.
Based on 1000 hours at 150°C.
V
RD
must be higher than V
POR
Level.
Note 2:
Note 3:
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