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參數(shù)資料
| 型號(hào)： | EM4022V12WS11 |
| 英文描述： | 6A Dual Synchronous Buck Regulator with Integrated MOSFETs; Temperature Range: -40°C to 85°C; Package: 50-QFN |
| 中文描述： | 模擬雜項(xiàng) |
| 文件頁(yè)數(shù)： | 10/15頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | EM4022V12WS11 |
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Copyright
2002, EM Microelectronic-Marin SA
4
www.emmicroelectronic.com
EM4022
Power storage capacitor calculation
The global current consumption of the device defines the
external storage capacitor.
When the device modulate, the supply voltage is picked
from the supply capacitor and should never decrease
under the falling edge of the power on reset (VPONF). If
this occurs, the device goes in a reset mode and any
data transmission is aborted. The worst case for the
storage capacitor calculation is when the device is put in
the electromagnetic field. At this moment the supply
reaches the VPONR and start to modulate. During
modulation the power store in the capacitor must be high
enough so that at the end of the modulation the supply is
higher than VPORF.. This means that the voltage reduction
on the capacitor must be less than the hysteresis of the
power on reset (VPHYS).
And this when the chip has a supply voltage of around
the power on reset threshold
The total current consumption from the storage capacitor
is defined by the modulation current IMOD,
This current is the consumption of the power on reset
block, oscillator and the logic which work at a typical
frequency of 125KHz. The GAP current is also included
in this parameter.
The duration where this currents is present for the
capacitor calculation, is dependent of the data rate
Calculation example :
Below we define typical cases combinations :
FOSC = 125 KHz
VPHYS = 120 mV
IMOD = 9
A
Data rate is 4 KBaud.
CPx
I
F
V
BaudRate
nF
MOD
OSC
HYS
=
==
**
*
**
*
* *
.
128 10
9 10
128 10
125 10 160 10
4 10
14 4
3
63
33
3
Of course, this value can be adapted to the
electromagnetic power and to the performances that
must be achieved. If a tag is put in a field within a short
time, the emitting power must be high enough to charge
up the capacitor.
The chip integrates a 140pF supply capacitor.
Block Diagram
Shunt
PON
VDD
VSS
GAP
N
P
C
R
TST
VDD
CG
RG
DG
D1
D3
D2
D4
OSC
CP
Q1
Q2
CR
M
COIL1
GAP
SI
XCLK TMC
VSS
VDD
COIL2
LOGIC
VSS VSS VSS
Fig. 5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EM4022V13WS11 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Multi Frequency Contactless Identification Device Anti-Collision compatible with BTG Supertag Category Protocols |
| EM4022V14WS11 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Multi Frequency Contactless Identification Device Anti-Collision compatible with BTG Supertag Category Protocols |
| EM4022V15WS11 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Multi Frequency Contactless Identification Device Anti-Collision compatible with BTG Supertag Category Protocols |
| EM4022V16WS11 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Multi Frequency Contactless Identification Device Anti-Collision compatible with BTG Supertag Category Protocols |
| EM4022V17WS11 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Multi Frequency Contactless Identification Device Anti-Collision compatible with BTG Supertag Category Protocols |
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