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參數(shù)資料
| 型號(hào)： | EM39LV040-90FHI |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | 4M (512Kx8) Bits Flash Memory |
| 中文描述： | 4分（512Kx8）位快閃記憶體 |
| 文件頁數(shù)： | 5/21頁 |
| 文件大?。?/td> | 275K |
| 代理商： | EM39LV040-90FHI |
EM39LV040
4M (512Kx8) Bits Flash Memory
SPECIFICATION
EM39LV040 Device Operation
Operation
CE#
OE#
WE#
DQ
Address
Read
V
IL
V
IL
V
IH
D
OUT
A
IN
Program
V
IL
V
IH
V
IL
D
IN
A
IN
Erase
V
IL
V
IH
V
IL
X
*
Sector or Block address, XXH for
Chip-Erase
Standby
V
IH
X
X
High Z
X
Write Inhibit
X
V
IL
X
High Z/D
OUT
X
Write Inhibit
X
X
V
IH
High Z/D
OUT
X
Software Mode
V
IL
V
IL
V
IH
See Table 3
Product
Identification
*
X can be V
IL
or V
IH
, but no other value.
Table 2:
EM39LV040 Device Operation
Write Command/Command Sequence
The EM39LV040 provides two software methods to detect the completion of a Program or
Erase cycle in order to optimize the system write cycle time. The software detection includes
two status bits
:
Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode
is enabled after the rising edge of WE#, which initiates the internal Program or Erase
operation. The actual completion of the write operation is asynchronous with the system;
therefore, either a Data# Polling or Toggle Bit read may be simultaneously completed with the
write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data
may appear to conflict with either DQ7 or DQ6. In order to prevent such spurious rejection,
when an erroneous result occurs, the software routine should include an additional two times
loop to read the accessed location. If both reads are valid, then the device has completed the
write cycle, otherwise the rejection is valid.
Chip Erase
The EM39LV040 provides Chip-Erase feature, which allows the entire memory array to be
erased to logic “1” state. The Chip-Erase operation is initiated by executing a six-byte
command sequence with Chip-Erase command (10H) at address 5555H in the last byte
sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#,
whichever occurs first. During the Erase operation, the only valid reads are Toggle Bit and
Data# Polling. See Table 3 for the command sequence, Figure 6 for timing diagram, and
Figure 15 for the corresponding flowchart. Any command issued during the Chip-Erase
operation is ignored.
This specification is subject to change without further notice. (07.22.2004 V1.0)
Page 5 of 21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EM39LV040-55FDC | 4M (512Kx8) Bits Flash Memory |
| EM39LV040-55FDI | 4M (512Kx8) Bits Flash Memory |
| EM39LV040-55FHC | 4M (512Kx8) Bits Flash Memory |
| EM39LV040-55FHI | 4M (512Kx8) Bits Flash Memory |
| EM39LV040-55FMC | 4M (512Kx8) Bits Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EM39LV040-90FLC | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
| EM39LV040-90FLI | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
| EM39LV040-90FMC | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
| EM39LV040-90FMI | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:4M (512Kx8) Bits Flash Memory |
| EM39LV088 | 制造商:EMC 制造商全稱:ELAN Microelectronics Corp 功能描述:8M Bits (1Mx8) Flash Memory |
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