參數(shù)資料
型號: EM23C4000
廠商: ELAN Microelctronics Corp .
英文描述: High Performance 512K × 8 CMOS ROM(高性能4M位(512K × 8)CMOS ROM)
中文描述: 高性能的CMOS為512k × 8光盤(高性能4分位(為512k × 8)的CMOS光盤)
文件頁數(shù): 1/4頁
文件大?。?/td> 30K
代理商: EM23C4000
1
* This specification are subject to be changed without notice.
512K X 8 CMOS ROM
10.23.1997
EM23C4000 SERIES
GENERAL DESCRIPTION
The EM23C4000 series high performance Read Only Memory is organized as 524,288 words by 8 bits with
access time from 150 ns. It is designed to be compatible with all microprocessor and similar applications where
high performance large bit storage and simple interface are important design considerations.
The EM23C4000P offers the simplest operation (no power down). Its programmable chip selects allow up to
four 4000K ROMs to be Wired-OR without external decoding.
The EM23C4000AP has the automatic power down feature. The power down capability is controlled by the
Chip Enable (CE/CE) input. When CE goes to high or CE goes low, the device will automatically goes to
power down mode and remains in a low power standby mode as long as CE remains high. This unique feature
provides system level power savings as much as 90%. An additional feature of the EM23C4000AP is the Output
Enable (OE/OE) function. This eliminates bus connection in multiple bus microprocessor systems.
FEATURES
524,288 x 8 bit organization
Access time 150 ns (max.) at 4.5V
V
CC
5.5V
Low-power consumption:
Operating: 193 mW (max.)
Standby: 275
μ
W (max.)
Fully-static operation
Three-state outputs
Completely TTL compatible.
EM23C4000FP
- Non power down version.
- Two programmable chip selects (CS).
EM23C4000EP
- Automatic power down (CE).
- Output Enable function (OE).
Package:
EM23C4000EP, EM23C4000FP - 32 pins 600 mil plastic DIP.
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