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參數(shù)資料
| 型號： | EL883B |
| 英文描述： | High Accuracy Fast Buffer |
| 中文描述： | 高精度快速緩沖 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 244K |
| 代理商： | EL883B |
EL2005EL2005C
High Accuracy Fast Buffer
DC Electrical Characteristics V
S
e g
15V VIN e 0V TMIN s TA s TMAX
Contd
Parameter
Description
Test Conditions
EL2005
EL2005C
Units
Min
Typ
Max
Test
Min
Typ
Max
Test
Level
VO
Output Voltage
VIN e g14V
g
125
V
g
125
V
Swing
RL e 1kX
VIN e g105V RL e 100X
g
9
g
98
I
g
9
g
98
I
V
TA e 25 C
IS
Supply Current
VIN e 0 (Note 1)
19
22
I
19
24
II
mA
PD
Power
VIN e 0
570
660
I
570
720
II
mW
Consumption
AC Electrical Characteristics T
C
e
25 C VS e g15V RS e 50X RL e 1kX
Parameter
Description
Test Conditions
EL2005
EL2005C
Units
Min
Typ
Max
Test
Min
Typ
Max
Test
Level
SR
Slew Rate
VIN e g10V VOUT e g5V 1000 1500
III
1000
1500
III
V
ms
BW
Bandwidth
VIN e 1Vrms
140
V
140
V
MHz
wNL
Phase
BW e 1 MHz to 20 MHz
2
V
2
V
Degree
Non-Linearity
tr
Rise Time
DVIN e 05V
25
V
25
V
ns
tP
Propagation Delay
DVIN e 05V
10
V
10
V
ns
HD
Harmonic
f l1 kHz
k
01
V
k
01
V
%
Distortion
AV
Voltage Gain
RS e 100X VIN e 1Vrms
097
099
10
I
096
099
10
II
VV
f e 1 kHz
RO
Output Impedance
VIN e 1Vrms
48
I
4
9
II
X
f e 1 kHz
Note 1 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating
temperatures will exceed the value at TJ e 25 C When supply voltages are g15V no-load operating junction temperatures
may rise 40 Cto60 C above ambient and more under load conditions Accordingly VOS may change one to several mV and
IB will change significantly during warm-up Refer to IB vs Temperature graph for expected values
Note 2 Measured in still air seven minutes after application of power
Note 3 Input bias current is guaranteed over the input range of b10V s VIN s a 10V
3
TD
is
17in
TD
is
25in
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