參數(shù)資料
型號(hào): EL7457C
英文描述: 40MHz Ultra-High Speed, Non-Inverting Quad CMOS Driver(40MHz超高速同相CMOS四驅(qū)動(dòng)器)
中文描述: 40MHz的超高速,非反相四CMOS驅(qū)動(dòng)器(40MHz的超高速同相的CMOS四驅(qū)動(dòng)器)
文件頁數(shù): 5/12頁
文件大小: 205K
代理商: EL7457C
2
EL7457C
40MHz Non-Inverting Quad CMOS Driver
E
L
7457C
Absolute Maximum Ratings (T
A= 25°C)
Absolute maximum ratings are those values beyond which the device
could be permanently damaged. Absolute maximum ratings are stress
ratings only and functional device operation is not implied.
Supply Voltage (VS+ to GND)
+16.5V
Input Voltage
GND -0.3V, VS+ +0.3V
Continuous Output Current
100mA
Storage Temperature Range
-65°C to +150°C
Ambient Operating Temperature
-40°C to +85°C
Operating Junction Temperature
125°C
Power Dissipation:
See Curves
Maximum ESD
2kV
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA.
Electrical Characteristics
VS+ = +5V, VS- = -5V, VH = +5V, VL = -5V, TA = 25°C, unless otherwise specified
Parameter
Description
Condition
Min
Typ
Max
Units
Input
VIH
Logic “1” Input Voltage
2.0
V
IIH
Logic “1” Input Current
VIH = 5V
0.1
10
A
VIL
Logic “0” Input Voltage
0.8
V
IIL
Logic “0” Input Current
VIL = 0V
0.1
10
A
Cin
Input Capacitance
3.5
pF
Rin
Input Resistance
50
M
Output
ROV1
ON Resistance VH to OUTx
IOUT = -100mA
4.5
6
ROV2
ON Resistance VL to OUTx
IOUT = +100mA
4
6
ILeak
Output Leakage Current
VH = VS+, VL = VS-0.1
10
A
IPK
Peak Output Current
Source
2.0
A
Sink
2.0
A
Power Supply
IS
Power Supply Current
Inputs = VS+
0.5
1.5
mA
Switching Characteristics
tR
Rise Time
CL = 1000pF
13.5
ns
tF
Fall Time
CL = 1000pF
13
ns
tRFdelta
tR, tF Mismatch
CL = 1000pF
0.5
ns
tD-1
Turn-Off Delay Time
CL = 1000pF
12.5
ns
tD-2
Turn-On Delay Time
CL = 1000pF
14.5
ns
tDdelta
tD-1 - TD-2 Mismatch
CL = 1000pF
2
ns
Tenable
Enable Delay Time
12
ns
Tdisable
Disable Delay Time
12
ns
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