參數(shù)資料
型號: EL5420CL-T7
廠商: Intersil
文件頁數(shù): 5/20頁
文件大小: 0K
描述: IC OPAMP QUAD R-R 12MHZ 16-QFN
標準包裝: 1,000
放大器類型: 電壓反饋
電路數(shù): 4
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 10 V/µs
增益帶寬積: 8MHz
-3db帶寬: 12MHz
電流 - 輸入偏壓: 2nA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 500µA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 16.5 V,±2.25 V ~ 8.25 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-VQFN 裸露焊盤
供應商設備封裝: 16-QFN-EP(4x4)
包裝: 帶卷 (TR)
13
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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FN7186.7
December 15, 2011
supply voltage, plus the power in the IC due to the loads as
shown in Equation 2:
when sourcing, and:
when sinking.
where:
i = 1 to 2 for dual and 1 to 4 for quad
VS = Total supply voltage
ISMAX = Maximum supply current per amplifier
VOUTi = Maximum output voltage of the application
ILOADi = Load current
If we set the two PDMAX equations equal to each other, we
can solve for RLOADi to avoid device overheat. Figure 27
provide a convenient way to see if the device will overheat.
The maximum safe power dissipation can be found
graphically, based on the package type and the ambient
temperature. By using the previous equation, it is a simple
matter to see if PDMAX exceeds the device's power derating
curves. To ensure proper operation, it is important to observe
the recommended derating curves in Figure 27.
Unused Amplifiers
It is recommended that any unused amplifiers in a dual and
a quad package be configured as a unity gain follower. The
inverting input should be directly connected to the output
and the non-inverting input tied to the ground plane.
Driving Capacitive Loads
The EL5120, EL5220, and EL5420 can drive a wide range of
capacitive loads. As load capacitance increases, however,
the -3dB bandwidth of the device will decrease and the
peaking will increase. The amplifiers drive 10pF loads in
parallel with 10k
Ω with just 1.5dB of peaking, and 100pF
with 6.4dB of peaking. If less peaking is desired in these
applications, a small series resistor (usually between 5
Ω and
50
Ω) can be placed in series with the output. However, this
will obviously reduce the gain slightly. Another method of
reducing peaking is to add a “snubber” circuit at the output.
A snubber is a shunt load consisting of a resistor in series
with a capacitor. Values of 150
Ω and 10nF are typical. The
advantage of a snubber is that it does not draw any DC load
current or reduce the gain
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5120, EL5220, and EL5420 can provide gain at high
frequency. As with any high-frequency device, good printed
circuit board layout is necessary for optimum performance.
Ground plane construction is highly recommended, lead
lengths should be as short as possible and the power supply
pins must be well bypassed to reduce the risk of oscillation.
For normal single supply operation, where the VS- pin is
connected to ground, a 0.1F ceramic capacitor should be
placed from VS+ to pin to VS- pin. A 4.7F tantalum
capacitor should then be connected in parallel, placed in the
region of the amplifier. One 4.7F capacitor may be used for
multiple devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are to be
used.
P
DMAX
ΣiV
S
I
SMAX
V
S+
(
V
OUT i )
I
LOAD i
×
+
×
[]
×
=
(EQ. 2)
P
DMAX
ΣiV
S
I
SMAX
V
OUTi
(
V
S- )
I
LOADi
×
+
×
[]
×
=
(EQ. 3)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
FIGURE 27. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
POWER
DIS
S
IP
A
T
ION
(W
)
AMBIENT TEMPERATURE (°C)
θJA = 44°C/W
QFN16
2.27W
θJA = 55°C/W
DFN8
1.80W
1.22W
θ
JA = 82°C/W
SOIC14
467mW
870mW
θJA = 115°C/W
MSOP8
θJA = 93°C/W
TSSOP14
θJA = 214°C/W
TSOT5
EL5120, EL5220, EL5420
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