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| 型號： | EL5308IUZ-T7 |
| 廠商： | Intersil |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC AMP FIXED GAIN 450MHZ 16-QSOP |
| 標準包裝： | 1 |
| 放大器類型： | 通用 |
| 電路數(shù)： | 3 |
| 轉(zhuǎn)換速率： | 4500 V/µs |
| -3db帶寬： | 450MHz |
| 電流 - 輸入偏壓： | 2µA |
| 電壓 - 輸入偏移： | 3000µV |
| 電流 - 電源： | 3.7mA |
| 電流 - 輸出 / 通道： | 135mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 12 V，±2.5 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SSOP（0.154"，3.90mm 寬） |
| 供應商設(shè)備封裝： | 16-QSOP |
| 包裝： | 標準包裝 |
| 產(chǎn)品目錄頁面： | 1233 (CN2011-ZH PDF) |
| 其它名稱： | EL5308IUZ-T7DKR |
8
FN7358.7
August 10, 2010
Applications Information
Product Description
The EL5108 and EL5308 are fixed gain amplifiers that offer
a wide -3dB bandwidth of 450MHz and a low supply current
of 3.5mA per amplifier. They work with supply voltages
ranging from a single 5V to 10V and they are also capable of
swinging to within 1.2V of either supply on the output. These
combinations of high bandwidth, low power, and high slew
rate make the EL5108 and EL5308 the ideal choice for many
low-power/high-bandwidth applications such as portable,
handheld, or battery-powered equipment.
For varying bandwidth and higher gains, consider the
EL5166 with 1GHz on a 9mA supply current or the EL5164
with 600MHz on a 3.5mA supply current. Versions include
single, dual, and triple amp packages with 6 Ld SOT-23,
16 Ld QSOP, and 8 Ld SOIC or 16 Ld SOIC outlines.
Power Supply Bypassing and Printed Circuit
Board Layout
As with any high frequency device, good printed circuit
board layout is necessary for optimum performance. Low
impedance ground plane construction is essential. Surface
mount components are recommended, but if leaded
components are used, lead lengths should be as short as
possible. The power supply pins must be well bypassed to
reduce the risk of oscillation. The combination of a 4.7F
tantalum capacitor in parallel with a 0.01F capacitor has
been shown to work well when placed at each supply pin.
Disable/Power-Down
The EL5108 and EL5308 amplifiers can be disabled and
placing their outputs in a high impedance state. When
disabled, the amplifier supply current is reduced to <25A.
The EL5108 and EL5308 are disabled when the CE pin is
pulled up to within 1V of the positive supply. Similarly, the
amplifier is enabled by floating or pulling its CE pin to at least
3V below the positive supply. For ±5V supply, this means
that the amplifier will be enabled when CE is 2V or less, and
disabled when CE is above 4V. Although the logic levels are
not standard TTL, this choice of logic voltages allow the
EL5108 and EL5308 to be enabled by tying CE to ground,
even in 5V single supply applications. The CE pins can be
driven from CMOS outputs.
Gain Setting
The EL5108 and EL5308 are built with internal feedback and
gain resistors. The internal feedback resistors have equal
value; as a result, the amplifier can be configured into gain of
+1, -1, and +2 without any external resistors. Figure 21
shows the amplifier in gain of +2 configuration. The gain
error is ±2% maximum. Figure 22 shows the amplifier in
gain-of-1 configuration. For gain of +1, IN+ and IN- should
be connected together as shown in Figure 23. This
configuration avoids the effects of any parasitic capacitance
on the IN- pin. Since the internal feedback and gain resistors
change with temperature and process, external resistor
should not be used to adjust the gain settings.
FIGURE 19. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 20. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Typical Performance Curves (Continued)
1
0.9
0.8
0.6
0.4
0.1
0
25
50
75
100
150
AMBIENT TEMPERATURE (°C)
POWE
R
DI
SSI
PATI
ON
(W)
125
85
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.2
0.7
0.3
0.5
909mW
625mW
633mW
391mW
SO16 (0.150”)
θJA=110°C/W
SO8
θJA=160°C/W
QSOP16
θJA=158°C/W
SOT23-6
θJA=256°C/W
AMBIENT TEMPERATURE (°C)
0
0.4
1.4
1.2
1
0.8
0.6
0.2
0
25
50
75
100
150
P
O
WER
DIS
S
IPATION
(W
)
125
85
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.1
1.250W
QSOP16
θJA=112°C/W
909mW
893mW
435mW
SO8
θJA=110°C/W
SOT23-6
θJA=230°C/W
SO16 (0.150”)
θJA=80°C/W
FIGURE 21. AV = +2
-
+
325
Ω
325
Ω
IN-
IN+
FIGURE 22. AV = -1
-
+
325
Ω
325
Ω
IN-
GND
EL5108, EL5308
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