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參數(shù)資料
| 型號(hào)： | EL5228IL-T7 |
| 廠商： | Intersil |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 0K |
| 描述： | IC AMP VCOM DUAL BUFF 10-DFN |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 應(yīng)用： | TFT-LCD 面板：伽瑪緩沖器，VCOM 驅(qū)動(dòng)器 |
| 電路數(shù)： | 2 |
| -3db帶寬： | 12MHz |
| 轉(zhuǎn)換速率： | 10 V/µs |
| 電流 - 電源： | 3.5mA |
| 電流 - 輸出 / 通道： | 120mA |
| 電壓 - 電源，單路/雙路(±)： | 4.5 V ~ 18 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 10-VFDFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 10-DFN-EP（3x3） |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | EL5228IL-T7CT |
2
Absolute Maximum Ratings (TA = 25°C)
VCC Supply Voltage between VS and GND . . . . . . . . . . . . . . TBD
Supply Voltage between VSD and GND . . . . . . . . . . . . . . . . . . TBD
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . . TBD
Ambient Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . TBD
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +15V, VS- = 0V, RL = 1k to 7.5V, TA = 25°C unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
GAMMA BUFFER INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 7.5V
2
14
mV
TCVOS
Average Offset Voltage Drift
(Note 1)
5
V/°C
IB
Input Bias Current
VCM= 7.5V
2
50
nA
RIN
Input Impedance
1G
CIN
Input Capacitance
2pF
AV
Voltage Gain
0.5
≤ VOUT ≤ 14.5V, RL = 10k
0.995
1.005
V/V
GAMMA BUFFER OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
80
150
mV
VOH
Output Swing High
IL = 5mA
14.85
14.92
V
ISC
Short Circuit Current
Short to GND (Note 2)
±80
±120
mA
GAMMA BUFFER DYNAMIC PERFORMANCE
SR
Slew Rate (Note 3)
1V
≤ VOUT ≤14V, 20% to 80%, RL = 10k
710
V/s
tS
Settling to +0.1%
VO = 2V Step
500
ns
BW
-3dB Bandwidth
RL = 10k, CL = 10pF
12
MHz
CS
Channel Separation
f = 5MHz
75
dB
VCOM AMPLIFIER INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 7.5V
3
15
mV
TCVOS
Average Offset Voltage Drift (Note 4)
7
V/°C
IB
Input Bias Current
VCM = 7.5V
2
60
nA
RIN
Input Impedance
1G
CIN
Input Capacitance
2pF
CMIR
Common-Mode Input Range
-0.5
+15.5
V
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 15.5V
53
72
dB
AVOL
Open-Loop Gain
0.5V
≤ VOUT ≤ 14.5V
62
70
dB
VCOM AMPLIFIER OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
80
150
mV
VOH
Output Swing High
IL = 5mA
14.85
14.92
V
ISC
Short-circuit Current
±180
mA
IOUT
Output Current
±65
mA
EL5228
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