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參數(shù)資料
| 型號： | EL5174ISZ-T7 |
| 廠商： | Intersil |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC DRVR TWISTED 550MHZ SGL 8SOIC |
| 標(biāo)準包裝： | 1 |
| 放大器類型： | 差分 |
| 電路數(shù)： | 1 |
| 輸出類型： | 差分 |
| 轉(zhuǎn)換速率： | 1100 V/µs |
| 增益帶寬積： | 200MHz |
| -3db帶寬： | 550MHz |
| 電流 - 輸入偏壓： | 14µA |
| 電壓 - 輸入偏移： | 1400µV |
| 電流 - 電源： | 12.5mA |
| 電流 - 輸出 / 通道： | 100mA |
| 電壓 - 電源，單路/雙路(±)： | 4.75 V ~ 11 V，±2.38 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOIC |
| 包裝： | 標(biāo)準包裝 |
| 其它名稱： | EL5174ISZ-T7DKR |
EL5174, EL5374
11
FN7313.8
August 28, 2012
FIGURE 26.
Choice of Feedback Resistor and Gain
Bandwidth Product
For applications that require a gain of +1, no feedback resistor
is required. Just short the OUT+ pin to FBP pin and OUT- pin to
FBN pin. For gains greater than +1, the feedback resistor
forms a pole with the parasitic capacitance at the inverting
input. As this pole becomes smaller, the amplifier's phase
margin is reduced. This causes ringing in the time domain and
peaking in the frequency domain. Therefore, RF has some
maximum value that should not be exceeded for optimum
performance. If a large value of RF must be used, a small
capacitor in the few Pico farad range in parallel with RF can
help to reduce the ringing and peaking at the expense of
reducing the bandwidth.
The bandwidth of the EL5174 and EL5374 depends on the load
and the feedback network. RF and RG appear in parallel with
the load for gains other than +1. As this combination gets
smaller, the bandwidth falls off. Consequently, RF also has a
minimum value that should not be exceeded for optimum
bandwidth performance. For gain of +1, RF = 0 is optimum. For
the gains other than +1, optimum response is obtained with RF
between 500
Ω to 1kΩ.
The EL5174 and EL5374 have a gain bandwidth product of
200MHz for RLD = 1kΩ. For gains ≥5, its bandwidth can be
predicted by Equation 3:
Driving Capacitive Loads and Cables
The EL5174 and EL5374 can drive a 23pF differential
capacitor in parallel with 1k
Ω differential load with less than
5dB of peaking at gain of +1. If less peaking is desired in
applications, a small series resistor (usually between 5
Ω to
50
Ω) can be placed in series with each output to eliminate
most peaking. However, this will reduce the gain slightly. If the
gain setting is greater than 1, the gain resistor RG can then be
chosen to make up for any gain loss, which may be created by
the additional series resistor at the output.
When used as a cable driver, double termination is always
recommended for reflection-free performance. For those
applications, a back-termination series resistor at the
amplifier's output will isolate the amplifier from the cable and
allow extensive capacitive drive. However, other applications
may have high capacitive loads without a back-termination
resistor. Again, a small series resistor at the output can help to
reduce peaking.
Disable/Power-Down (for EL5374 only)
The EL5374 can be disabled and its outputs placed in a high
impedance state. The turn-off time is about 1.2s and the
turn-on time is about 130ns. When disabled, the amplifier's
supply current is reduced to 1.7A for IS+ and 120A for IS-
typically, thereby effectively eliminating the power
consumption. The amplifier's power-down can be controlled by
standard CMOS signal levels at the EN pin. The applied logic
signal is relative to the VS+ pin. Letting the EN pin float or
applying a signal that is less than 1.5V below VS+ will enable
the amplifier. The amplifier will be disabled when the signal at
the EN pin is above VS+ - 0.5V.
Output Drive Capability
The EL5174 and EL5374 have internal short circuit protection. Its
typical short circuit current is ±60mA. If the output is shorted
indefinitely, the power dissipation could easily increase such that
the part will be destroyed. Maximum reliability is maintained if
the output current never exceeds ±60mA. This limit is set by the
design of the internal metal interconnections.
Power Dissipation
With the high output drive capability of the EL5174 and EL5374,
it is possible to exceed the +135°C absolute maximum junction
temperature under certain load current conditions. Therefore, it
is important to calculate the maximum junction temperature for
the application to determine if the load conditions or package
types need to be modified for the amplifier to remain in the safe
operating area.
The maximum power dissipation allowed in a package is
determined according to Equation 4:
Where:
TJMAX = Maximum junction temperature
TAMAX = Maximum ambient temperature
θJA = Thermal resistance of the package
The maximum power dissipation actually produced by an IC is
the total quiescent supply current times the total power supply
voltage, plus the power in the IC due to the load, or as
expressed in Equation 5:
Where:
VSTOT = Total supply voltage = VS+ - VS-
ISMAX = Maximum quiescent supply current per channel
ΔVO = Maximum differential output voltage of the
application
RLD = Differential load resistance
VO+
FBP
RG
RF2
IN+
IN-
REF
FBN
VIN+
VIN-
VREF
RF1
VO-
Gain
BW
200MHz
=
×
(EQ. 3)
PD
MAX
T
JMAX
T
AMAX
–
Θ
JA
---------------------------------------------
=
(EQ. 4)
(EQ. 5)
PD
i
V
STOT
I
SMAX
×
V
(
STOT
ΔV
O )
–
ΔV
O
R
LD
------------
×
+
×
=
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| EL5175IS | 功能描述:IC LINE RCVR 550MHZ SGL 8-SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準包裝:1,000 系列:- 放大器類型:電壓反饋 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:33 V/µs 增益帶寬積:20MHz -3db帶寬:30MHz 電流 - 輸入偏壓:2nA 電壓 - 輸入偏移:3000µV 電流 - 電源:2.5mA 電流 - 輸出 / 通道:30mA 電壓 - 電源，單路/雙路(±):4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOIC 包裝:帶卷 (TR) |
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