Absolute Maximum Ratings (TA = +25°C)
參數(shù)資料
型號: EL5152IS-T7
廠商: Intersil
文件頁數(shù): 10/16頁
文件大小: 0K
描述: IC OP AMP LO OFF 300MHZ 8-SOIC
標準包裝: 1,000
放大器類型: 電壓反饋
電路數(shù): 1
轉(zhuǎn)換速率: 180 V/µs
增益帶寬積: 165MHz
-3db帶寬: 270MHz
電流 - 輸入偏壓: 120nA
電壓 - 輸入偏移: 500µV
電流 - 電源: 3mA
電流 - 輸出 / 通道: 105mA
電壓 - 電源,單路/雙路(±): 5 V ~ 12 V,±2.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 帶卷 (TR)
其它名稱: EL5152IS-T7TR
3
FN7385.6
March 2, 2009
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS and GND. . . . . . . . . . . . . . . . . . . 13.2V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 50mA
Current into IN+, IN-, CE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Pin Voltages . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.5V to VS +0.5V
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +5V, VS- = ±5V, RF = RG = 750Ω, RL = 150Ω, TA = +25°C, Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
BW
-3dB Bandwidth
AV = +1, RL = 500Ω, CL = 5.0pF
270
MHz
AV = +2, RL = 150Ω
85
MHz
GBWP
Gain Bandwidth Product
RL = 150Ω
165
MHz
BW1
0.1dB Bandwidth
AV = +1, RL = 500Ω
50
MHz
SR
Slew Rate
VO = -3V to +3V, AV = +2
120
155
V/s
VO = -3V to +3V, AV = 1, RL = 500Ω
180
V/s
tS
0.1% Settling Time
VOUT = -1V to +1V, AV = +2
30
ns
dG
Differential Gain Error
AV = +2, RL = 150Ω
0.06
%
dP
Differential Phase Error
AV = +2, RL = 150Ω
0.045
°
VN
Input Referred Voltage Noise
12
nV/
√Hz
IN
Input Referred Current Noise
1.8
pA/
√Hz
DC PERFORMANCE
VOS
Offset Voltage
-1
0.5
1
mV
TCVOS
Input Offset Voltage Temperature
Coefficient
Measured from TMIN to TMAX
-2
V/°C
AVOL
Open Loop Gain
VO is from -2.5V to 2.5V (EL5152 & EL5153)
10
20
kV/V
VO is from -2.5V to 2.5V (EL5252 & EL5455)
15
50
kV/V
INPUT CHARACTERISTICS
CMIR
Common Mode Input Range
Guaranteed by CMRR test
-2.5
2.5
V
CMRR
Common Mode Rejection Ratio
VCM = 2.5 to -2.5
85
110
dB
IB
Bias Current
-0.4
0.12
+0.6
A
IOS
Input Offset Current
-80
12
80
nA
RIN
Input Resistance
25
60
M
Ω
CIN
Input Capacitance
1pF
OUTPUT CHARACTERISTICS
VOUT
Output Voltage Swing
RL = 150Ω to GND
±3.0
±3.3
V
RL = 500Ω to GND
±3.4
±3.7
V
IOUT
Output Current
RL = 10Ω to GND
60
105
mA
EL5152, EL5153, EL5252, EL5455
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