FN7430.1 May 13, 2005 NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless ot" />
參數(shù)資料
型號: EL5129IREZ
廠商: Intersil
文件頁數(shù): 7/13頁
文件大小: 0K
描述: IC BUFFER GAMMA 6-CHAN 20HTSSOP
標準包裝: 74
應用: TFT-LCD 面板:伽瑪緩沖器,VCOM 驅動器
輸出類型: 滿擺幅
電路數(shù): 6
-3db帶寬: 10MHz
轉換速率: 9 V/µs
電流 - 電源: 3.5mA
電流 - 輸出 / 通道: 120mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 16.5 V,±2.25 V ~ 8.25 V
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)裸露焊盤
供應商設備封裝: 20-TSSOP-EP
包裝: 管件
3
FN7430.1
May 13, 2005
NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Absolute Maximum Ratings (TA = 25°C)
Supply Voltage between VS+ and VS-. . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.5V, VS+ +0.5V
Maximum Continuous Output Current (VOUT0-9) . . . . . . . . . . 15mA
Maximum Continuous Output Current (VOUTA). . . . . . . . . . . 100mA
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
VS+ = +15V, VS- = 0, RL = 10k, CL = 10pF to 0V, TA = 25°C unless otherwise specified
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS (REFERENCE BUFFERS)
VOS
Input Offset Voltage
VCM = 0V
2
20
mV
TCVOS
Average Offset Voltage Drift
(Note 1)
5
V/
°C
IB
Input Bias Current
VCM = 0V
2
50
nA
RIN
Input Impedance
10
M
CIN
Input Capacitance
1.35
pF
AV
Voltage Gain
1V
≤ VOUT ≤ 14V
0.992
1.008
V/V
CMIR
Input Voltage Range
EL5129, IN1 to IN3
1.5
VS+V
EL5329, IN1 to IN5
1.5
VS+V
EL5129, IN4 to IN6
0
VS+
-1.5
V
EL5329, IN6 to IN10
0
VS+
-1.5
V
INPUT CHARACTERISTICS (VCOM BUFFER)
VOS
Input Offset Voltage
VCM = 7.5V
1
20
mV
TCVOS
Average Offset Voltage Drift
(Note 1)
3
V/
°C
IB
Input Bias Current
VCM = 7.5V
2
50
nA
RIN
Input Impedance
10
M
CIN
Input Capacitance
1.35
pF
VREG
Load Regulation
VCOM = 7.5V, -60mA < IL < 60mA
-20
+20
mV
CMIRCOM
Input Voltage Range VCOM
0VS+V
OUTPUT CHARACTERISTICS (REFERENCE BUFFERS)
VOH
High Output Voltage - EL5129 & EL5329
(Output 1)
VIN = 15V, IO = 5mA
14.85
14.9
High Output Voltage - EL5129 (Output 2, 3),
EL5329 (Output 2-5)
14.8
14.85
V
High Output Voltage - EL5129 (Output 4-6),
EL5329 (Output 6-10)
VIN = 13.5V, IO = 5mA
13.45
13.5
V
VOL
Low Output Voltage - EL5129 (Output 1-3),
EL5329 (Output 1-5)
VIN = 1.5V, IO = 5mA
1.5
1.55
V
Low Output Voltage - EL5129 (Output 4-5),
EL5329 (Output 6-9)
VIN = 0V, IO = 5mA
150
200
mV
Low Output Voltage - EL5129 (Output 6),
EL5329 (Output 10)
100
150
mV
ISC
Short Circuit Current
100
120
mA
EL5129, EL5329
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