參數(shù)資料
型號: EGP20D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 2.0 Ampere Glass Passivated High Efficiency Rectifiers(平均整流電流2.0安培高效率玻璃鈍化整流器)
中文描述: 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
封裝: GLASS PACKAGE-2
文件頁數(shù): 1/3頁
文件大小: 39K
代理商: EGP20D
E
EGP20A - EGP20K, Rev. A
EGP20A - EGP20K
2.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
DO-15
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 55
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
2.0
A
i
f(surge)
75
A
P
D
3.13
25
40
15
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JL
T
stg
T
J
-65 to +150
-65 to +150
Features
Glass passivated cavity-free junction.
High surge current capability.
Low leakage current.
Superfast recovery time for high
efficiency.
Low forward voltage, high current
capability.
1.0 min
(25.4)
0.140 (3.56)
0.104 (2.64)
0.034 (0.86)
0.028 (0.71)
0.300 (7.62)
0.230 (5.84)
Dimensions in
inches (mm)
Parameter
Device
Units
20A
50
35
50
20B
100
70
100
20C
150
105
150
20D
200
140
200
20F
300
210
300
20G
400
280
400
20J
600
420
600
20K
800
560
800
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25
°
C
T
A
= 125
°
C
5.0
100
μ
A
μ
A
nS
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Maximum Forward Voltage @ 2.0 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
50
75
0.95
70
1.25
1.7
V
pF
45
Discrete POWE R & Signal
Technologies
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