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參數(shù)資料
| 型號： | EGN010MK |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Voltage - High Power GaN-HEMT |
| 中文描述： | 高電壓-高功率GaN - HEMT器件 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 190K |
| 代理商： | EGN010MK |
Channel Temperature T
ch
200
o
C
FEATURES
High Voltage Operation : V
DS
=50V
High Power : 41.0dBm (typ.) @ P
3dB
High Efficiency: 60%(typ.) @ P
3dB
Linear Gain : 15dB(typ.) @ f=3500MHz
Broad Frequency Range : 800 to 3700MHz
Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with
50V operation, and gives you higher gain.
This device target applications are low current and wide band
applications for high voltage.
ABSOLUTE MAXIMUM RATINGS
Item Symbol Condition Rating Unit
Drain-Source Voltage V
DS
120 V
Gate-Source Voltage V
GS
Tc=25
o
C -5 V
Total Power Dissipation P
t
40.9 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
250
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item Symbol Condition Limit Unit
min. Typ. Max.
Pinch-Off Voltage V
p
V
DS
=50V I
DS
=2.6mA -1.0 -2.0 -3.5 V
Gate-Drain Breakdown Voltage V
GDO
I
GS
=- 1.3 mA
- -350 - V
3dB Gain Compression Power P
3dB
V
DS
=50V 40.0 41.0 - dBm
Drain Efficiency
η
d
I
DS(DC)
=100mA - 60 - %
Linear Gain G
L
f=3.5GHz
14.0 15.0 - dB
Thermal Resistance R
th
Channel to Case - 4.5 5.5
o
C/W
Edition 1.0
June 2005
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25
o
C)
Item Symbol Condition Limit Unit
DC Input Voltage V
DS
50 V
Forward Gate Current I
GF
R
G
=50
<2.0 mA
Reverse Gate Current I
GR
R
G
=50
>-0.5 mA
EGN010MK
High Voltage - High Power GaN-HEMT
Preliminary
Eudyna GaN-HEMT 10W
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