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參數(shù)資料
| 型號： | EGF30M |
| 廠商： | 智威科技股份有限公司 |
| 英文描述： | CHC0603C0G101J5B, CAP CER CHIP 100 |
| 中文描述： | 表面貼裝玻璃鈍化結(jié)高效整流 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 64K |
| 代理商： | EGF30M |
PATENTED
EGF30A THRU EGF30M
SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
FEATURES
MECHANICAL DATA
* GPRC (Glass Passivated Rectifier Chip) inside
* Glass passivated cavity-free junction
* Ideal for surface mount automotive applications
* Superfast recovery time for high efficiency
* Built-in strain relief
* Easy pick and place
* High temperature soldering guaranteed: 260
o
C/10 seconds,
at terminals
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Case :
JEDEC DO-214AA molded plastic over passivated chip
Terminals :
Solder plated , solderable per MIL-STD-750,
Method 2026
Polarity :
Color band denotes cathode end
Mounting Position :
Any
Weight :
0.004 ounes , 0.12 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum average forward rectified current T
A
=75
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0 A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=125
T
A
=150
o
C
o
C
o
C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
trr
C
J
R
JA
R
JL
T
J
,T
STG
EGF30
A
B
D
F
G
J
M
50
100
200
300
400
600
1000
35
70
140
210
280
420
700
3.0
115
105
1.0
1.25
1.7
5
50
120
5
120
-
50
75
75
47
12
-65 to +175
-55 to +150
UNITS
Volts
Volts
Maximum DC blocking voltage
50
100
200
300
400
600
1000
K
800
560
800
Volts
Volts
Amps
Amps
uA
nS
pF
o
C / W
o
C
NOTES :(1)Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3)Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
Zowie Technology Corporation
REV. : 0
DO-214AA
*Dimensions in inches and (millimeters)
0.150(3.80)
0.130(3.30)
0.102(2.60)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.236(6.00)
0.197(5.00)
0.016(0.40)
0.006(0.15)
0.187(4.75)
0.167(4.24)
0.083(2.12)
0.077(1.95)
TM
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| EGL1A | Ultrafast Switching Surface Mount Si-Rectifiers |
| EGL1B | Ultrafast Switching Surface Mount Si-Rectifiers |
| EGL1D | Ultrafast Switching Surface Mount Si-Rectifiers |
| EGL1G | Ultrafast Switching Surface Mount Si-Rectifiers |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EGF3AB | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:3.0A Sintered Glass Passivated Super Fast Rectifier |
| EGF3BB | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:3.0A Sintered Glass Passivated Super Fast Rectifier |
| EGF3DB | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:3.0A Sintered Glass Passivated Super Fast Rectifier |
| EGF3GB | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:3.0A Sintered Glass Passivated Super Fast Rectifier |
| EGF3JB | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:3.0A Sintered Glass Passivated Super Fast Rectifier |
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