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參數(shù)資料
| 型號(hào)： | EGF1D |
| 廠商： | GE Security, Inc. |
| 英文描述： | ULTRAFAST SURFACE MOUNT RECTIFIER |
| 中文描述： | 超快表面貼裝整流 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | EGF1D |
EGF1A THRU EGF1D
ULTRAFAST SURFACE MOUNT RECTIFIER
Reverse Voltage -
50 to 200 Volts
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Superfast recovery times for high efficiency
Glass passivated cavity-free junction
Built-in strain relief
Easy pick and place
High temperature soldering guaranteed: 450°C/5 seconds
at terminals
Complete device submersible temperature of
265°C for 10 seconds in solder bath
MECHANICAL DATA
Case:
JEDEC DO-214BA molded plastic over glass body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight
: 0.0048 ounces, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
EGF1A
EGF1B
EGF1C
EGF1D
UNITS
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=125°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
EA
50
35
50
EB
100
70
100
EC
150
105
150
ED
200
140
200
V
RRM
V
RMS
V
DC
Volts
Volts
Volts
I
(AV)
1.0
Amps
I
FSM
30.0
Amps
V
F
1.0
5.0
50.0
50.0
15.0
85.0
30.0
Volts
T
A
=25°C
T
A
=125°C
I
R
μ
A
t
rr
C
J
ns
pF
R
Θ
JA
R
Θ
JL
T
J
,T
STG
°C/W
Operating junction and storage temperature range
-65 to +175
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied V
R
=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
4/98
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.0105 (0.27)
0.030 (0.76)
0.060 (1.52)
0.152TYP.
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.106 (2.69)
0.118 (3.00)
0.040 (1.02)
0.060 (1.52)
0.098 (2.49)
0.108 (2.74)
DO-214BA
PATENTED*
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EGF1D/1- | 功能描述:整流器 200 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGF1D/17 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 200V 1A 2-Pin DO-214BA T/R |
| EGF1D/17- | 功能描述:整流器 200 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGF1D/17A | 功能描述:整流器 200 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGF1D/19- | 功能描述:整流器 200 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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