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參數(shù)資料
| 型號(hào)： | EGF1C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1.0 Ampere High Efficiency Glass Passivated Rectifier(平均整流電流1.0安培高效率玻璃鈍化整流器) |
| 中文描述： | 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | EGF1C |
E
EGF1A-EGF1D, Rev. B
EGF1A - EGF1D
1.0 Ampere High Efficiency Glass Passivated Rectifier
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1998 Fairchild Semiconductor Corporation
Features
Low forward voltage drop.
Low profile package.
Fast switching for high efficiency.
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
L
= 100
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient **
Thermal Resistance, Junction to Case **
Storage Temperature Range
Operating Junction Temperature
1.0
A
i
f(surge)
30
A
P
D
2.0
13
85
30
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JC
T
stg
T
J
-65 to +175
-65 to +175
SMA/DO-214AC
COLOR BAND
DENOTES CATHODE
Parameter
Device
Units
1A
50
35
50
1B
100
70
100
1C
150
105
150
1D
200
140
200
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage
Maximum Reverse Current
@ rated V
R
(Rated V
R
)
T
A
= 25
°
C
T
A
= 125
°
C
10
100
1.0
50
μ
A
μ
A
V
ns
Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
15
pF
2
1
0.208 (5.283)
0.188 (4.775)
0.181 (4.597)
0.157 (3.988)
0.096 (2.438)
0.078 (1.981)
0.062 (1.575)
0.055 (1.397)
0.008 (0.203)
0.002 (0.051)
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
0.114 (2.896)
0.098 (2.489)
+
3.93
3.73
1.67
1.47
2.38
2.18
5.49
5.29
Minimum Recommended
Land Pattern
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EGF1D | 1.0 Ampere High Efficiency Glass Passivated Rectifier(平均整流電流1.0安培高效率玻璃鈍化整流器) |
| EGF20A | SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER |
| EGF20B | SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER |
| EGF20D | SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER |
| EGF20F | SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EGF1C/17- | 功能描述:整流器 150 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGF1C/2KA | 功能描述:整流器 150 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGF1C/5CA | 功能描述:整流器 150 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGF1C/67A | 功能描述:整流器 1.0 Amp 150V 50ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGF1C/69A | 功能描述:整流器 150 Volt 1.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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