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參數(shù)資料
| 型號(hào)： | EFA120D-SOT89 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Distortion GaAs Power FET |
| 中文描述： | 低失真GaAs功率場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | EFA120D-SOT89 |
G
S
D
SOURCE
16-20
177-183
65-75
1
9
29-31
59
1
4
14-16
65-69
Excelics
PRELIMINARY DATA SHEET
DC-4GHz
Low Distortion GaAs Power FET
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+28.0dBm TYPICAL OUTPUT POWER
14.0dB TYPICAL POWER GAIN AT 2GHz
0.7dB TYPICAL NOISE FIGURE AT 2GHz
+42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT
AT 2GHz
0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Applications
Analog and Digital Wireless System
HPA
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
EFA120D-SOT89
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f = 2GHz
Vds=7V, Ids=180mA
Gain at 1dB Compression f = 2GHz
Vds=7V, Ids=180mA
Power Added Efficiency at 1dB Compression
Vds=7V, Ids=180mA f = 2GHz
Noise Figure f = 2GHz
Vds=5V, Ids=75mA
Vds=5-7V, Ids=180mA
Output 3rd Order Intercept Point f = 2GHz
Vds=5-7V, Ids=180mA
Vds=5V, Ids=75mA
26.5
28.0
14.0
dBm
G
1dB
12.0
dB
PAE
45
%
NF
0.7
1.2
42
33
dB
IP3
dBm
Idss
Saturated Drain Current Vds=3V, Vgs=0V
220
340
440
mA
Gm
Transconductance Vds=3V, Vgs=0V
140
180
mS
Vp
Pinch-off Voltage Vds=3V, Ids=3mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-7
-14
V
Rth
Thermal Resistance
*Overall Rth depends on case mounting.
43*
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
30mA
26dBm
175
o
C
-65/175
o
C
3.2 W
CONTINUOUS
2
7V
-4V
390mA
5mA
@ 3dB Compression
150
o
C
-65/150
o
C
2.7 W
(Top View)
All Dimensions In Mils
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