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參數(shù)資料
| 型號(hào)： | EFA080A-70 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Distortion GaAs Power FET |
| 中文描述： | 低失真GaAs功率場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 25K |
| 代理商： | EFA080A-70 |
S
S
D
G
(
4
20
44
19
4
7
1
Excelics
EFA080A-70
DATA SHEET
Low Distortion GaAs Power FET
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+23.5dBm TYPICAL OUTPUT POWER
7.0 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=5V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=5V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=5V, Ids=50% Idss f=12GHz
21.5
23.5
23.5
7.0
4.5
30
dBm
G
1dB
6.0
dB
PAE
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
130
210
300
mA
Gm
Transconductance Vds=3V, Vgs=0V
90
120
mS
Vp
Pinch-off Voltage Vds=3V, Ids=2.0mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-10
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-6
-14
V
Rth
Thermal Resistance
135
*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
ABSOLUTE
1
8V
-5V
Idss
20mA
22dBm
175
o
C
-65/175
o
C
1.1W
CONTINUOUS
2
5V
-4V
185mA
4mA
@ 3dB Compression
150
o
C
-65/150
o
C
0.9W
All Dimensions In mils.
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