參數(shù)資料
型號： EE-SY201
廠商： Electronic Theatre Controls, Inc.
英文描述： Photomicrosensor (Reflective)
中文描述： Photomicrosensor（反光）
文件頁數(shù)： 1/2頁
文件大小： 174K
代理商： EE-SY201
EE-SY201
Photomicrosensor (Reflective)
241
Photomicrosensor (Reflective)
EE-SY201
■
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
■
Features
The LED requires a forward current of only 5 mA due to the Photo-
Darlington transistor built into the detector.
With a red LED light source.
■
Absolute Maximum Ratings (Ta = 25 C)
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 C.
2.
Complete soldering within 10 seconds.
■
Electrical and Optical Characteristics (Ta = 25 C)
Note:
The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A
K
C
E
Anode
Cathode
Collector
Emitter
Dimensions Tolerance
3 mm max.
3
<
mm
≤
6
6
<
mm
≤
10
10
<
mm
≤
18
18
<
mm
≤
30
±
0.3
±
0.375
±
0.45
±
0.55
±
0.65
A
K
C
E
Two, 1 dia.
Two. 0.5
Two. 0.7
Four, 0.125
Optical axis
Unless otherwise specified, the
tolerances are as shown below.
Item
Forward current
Symbol
I
F
Rated value
15 mA
(see note 1)
---
Emitter
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Operating
Storage
I
FP
V
R
V
CEO
4 V
24 V
Detector
V
ECO
---
I
C
P
C
20 mA
50 mW
(see note 1)
–20 C to 60 C
–20 C to 80 C
260 C
(see note 2)
Ambient tem-
perature
Topr
Tstg
Tsol
Soldering temperature
Item
Symbol
Value
Condition
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Light current
V
F
I
R
2.0 V typ., 2.6 V max.
0.01 A typ., 5 A max.
700 nm typ.
0.3 A min., 8.0 A max.
I
F
= 15 mA
V
R
= 4 V
I
F
= 10 mA
I
= 5 mA, V
= 10 V
White paper with a reflection ratio of
90%, d = 4 mm (see note)
V
CE
= 10 V, 0
l
x
---
---
P
Detector
I
L
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
I
D
I
LEAK
V
CE
(sat)
2 nA typ., 250 nA max.
---
---
P
750 nm typ.
V
CE
= 10 V
Rising time
Falling time
tr
tf
180 s typ.
60 s typ.
V
CC
= 5 V, R
L
= 100 , I
L
= 1 mA
V
CC
= 5 V, R
L
= 100 , I
L
= 1 mA
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