參數(shù)資料
型號(hào): EE-SX298
廠商: Omron Electronics Inc-EMC Div
文件頁數(shù): 1/4頁
文件大小: 255K
描述: OPTO SENSOR SLOT TYPE 3MM PCB
產(chǎn)品變化通告: EE-SX298,SX2088,Z4D Discontinuation Jul/2011
產(chǎn)品目錄繪圖: EE Series Slotted
Through Beam Slot Type
標(biāo)準(zhǔn)包裝: 200
檢測(cè)距離: 0.118"(3mm)
檢測(cè)方法: 可傳導(dǎo)的
輸出配置: 光電達(dá)林頓管
電流 - DC 正向(If): 50mA
電流 - 集電極 (Ic)(最大): 20mA
電壓 - 集電極發(fā)射極擊穿(最大): 35V
響應(yīng)時(shí)間: 70µs,70µs
安裝類型: 通孔
封裝/外殼: PCB 安裝
包裝: 散裝
類型: 無放大
工作溫度: -25°C ~ 85°C
產(chǎn)品目錄頁面: 2785 (CN2011-ZH PDF)
其它名稱: EESX298
OR601
Photomicrosensor (Transmissive)   EE-SX298   177
Photomicrosensor (Transmissive)
EE-SX298
?SPAN class="pst EE-SX298_2586944_6"> Dimensions
Note:All units are in millimeters unless otherwise indicated.
?SPAN class="pst EE-SX298_2586944_6"> Features
"General-purpose model with a 3-mm-wide slot.
"PCB mounting type.
"High resolution with a 0.5-mm-wide aperture.
"With a Photo-Darlington transistor as a detector element.
?SPAN class="pst EE-SX298_2586944_6"> Absolute Maximum Ratings (Ta=25?SPAN class="pst EE-SX298_2586944_6">C)
Note:1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2. The pulse width is 10 ?/SPAN>s maximum with a frequency of 100Hz.
3. Complete soldering within 10 seconds.
?SPAN class="pst EE-SX298_2586944_6"> Ordering Information
?SPAN class="pst EE-SX298_2586944_6"> Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SX298_2586944_6">C)
Internal Circuit
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Four,
0.5?.1
Four, 0.25+0.1
Two, C1?.3
Four, C0.3
Optical axis
Cross section AA
Cross section BB
5?.1
0.5?.1
.5?.1
10?.2
6.2?.5
6.5?.1
2.5?.1
12.2?.3
9.2?.3
K
A
C
E
Unless otherwise specified,
the tolerances are ?.2 mm.
Item
Symbol   Rated value
Emitter   Forward current   I
F
50 mA (seenote 1)
Pulse forward current I
FP
1 A (seenote2)
Reverse voltage   V
R
4 V
Detector   CollectorEmitter
voltage
V
CEO
35 V
EmitterCollector
voltage
V
ECO
---
Collector current   I
C
20 mA
Collector dissipation P
C
100 mW (seenote 1)
Ambient
temperature
Operating
T
opr
25癈 to 85癈
Storage
T
stg
30癈 to 100癈
Soldering temperature
T
sol
260癈 (see note 3)
Description
Model
Photomicrosensor (transmissive)    EE-SX298
Item
Symbol
Value
Condition
Emitter    Forward voltage
V
F
1.2 V typ., 1.4 V max.
I
F
 = 20 mA
Reverse current
I
R
0.01 糀 typ., 10 糀 max.
V
R
 = 4 V
Peak emission wavelength
?/DIV>
P
940 nm typ.
I
F
 = 20 mA
Detector    Light current
I
L
0.5 mA min., 20 mA max.
I
F
 = 1 mA, V
CE
 = 2 V
Dark current
I
D
2 nA typ., 1,000 nA max.
V
CE
 = 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated voltage V
CE (sat)
0.75 V typ., 1.0 V max.
I
F
 = 2 mA, I
L
 = 0.5 mA
Peak spectral sensitivity wavelength ?/DIV>
P
780 nm typ.
V
CE
 = 5 V
Rising time
tr
70 約 typ.
V
CC
 = 5 V, R
L
 = 100 ? I
L
 = 10 mA
Falling time
tf
70 約 typ.
V
CC
 = 5 V, R
L
 = 100 ? I
L
 = 10 mA
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