參數(shù)資料
型號(hào)： EE-SJ3
廠商： Omron Electronics LLC
英文描述： Photomicrosensor (Transmissive)
中文描述： Photomicrosensor（透射）
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 430K
代理商： EE-SJ3
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
Internal Circuit
K
A
C
E
Unless otherwise specified, the
tolerances are as shown below.
Model
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Aperture (a x b)
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Four, 0.5
Four, 0.25
Center mark
Cross section BB
Cross section AA
7.2
±
0.2
2.54
±
0.2
7.6
±
0.3
6
0.2
10.2
6.2
0.3
Photomicrosensor
(Transmissive)
Features
High-resolution model with a 0.2-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing
aperture, and model with a horizontal sensing aperture
are available.
All models have a 3 mm wide slot.
EE-SJ3 Series
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Forward current
Symbol
I
F
Rated value
50 mA
(see note 1)
1 A
(see note 2)
4 V
30 V
Emitter
Pulse forward
current
Reverse voltage
Collector--Emitter
voltage
Emitter--Collector
voltage
Collector current
Collector
dissipation
Operating
Storage
I
FP
V
R
V
CEO
Detector
V
ECO
---
I
C
P
C
20 mA
100 mW
(see note 1)
--25
°
C to 85
°
C
--30
°
C to 100
°
C
260
°
C
(see note 3)
Amb e
temperature
Topr
Tstg
Tsol
Soldering temperature
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25
°
C.
2. Thepulsewidthis 10
μ
s maximumwithafrequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Ordering Information
Description
Part number
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Photomicrosensor (Transmissive)
o o
c ose so (
a s
ss e)
Electrical and Optical Characteristics (Ta = 25
°
C)
Item
Symbol
Value
Condition
Co d o
EE-SJ3-C
1.2 V typ., 1.5 V max.
0.01
μ
A typ., 10
μ
A max.
940 nm typ.
EE-SJ3-D
EE-SJ3-G
Emitter
Forward voltage
Reverse current
Peak emission
wavelength
Light current
Dark current
Leakage current
Collector--Emitter
saturated voltage
Peak spectral sensitivity
wavelength
V
F
I
R
λ
P
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
Detector
I
L
I
D
I
LEAK
V
CE
(sat)
1 to 28 mA typ.
2 nA typ., 200 nA max.
---
0.1 V typ.,
0.4 V max.
850 nm typ.
0.1 mA min.
0.5 to 14 mA
I
F
= 20 mA, V
CE
= 10 V
V
CE
= 10 V, 0
x
---
I
F
= 20 mA,
I
L
= 0.1 mA
V
CE
= 10 V
---
0.1 V typ.,
0.4 V max.
λ
P
Rising time
tr
4
μ
s typ.
V
CC
= 5 V,
R
L
= 100
,
I
L
= 5 mA
Falling time
tf
4
μ
s typ.
相關(guān)PDF資料
PDF描述
EE-SX1055 Opto-Switch
EE-SX4134 Photomicrosensor (Transmissive)
EE-SX470 Photomicrosensor
EE-SX470P Photomicrosensor
EE-SX471 Photomicrosensor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EE-SJ3B 制造商:Omron Corporation 功能描述:
EESJ3C 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Trays 制造商:Omron Electronic Components LLC 功能描述:SENSR OPTO SLOT 3.4MM TRANS THRU 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin
EE-SJ3-C 功能描述:光學(xué)開(kāi)關(guān)（透射型，光電晶體管輸出） PHOTO MICROSENSOR RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝:
EESJ3D 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Trays 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin
EE-SJ3-D 功能描述:光學(xué)開(kāi)關(guān)（透射型，光電晶體管輸出） TRANS PCB TERM. RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*