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參數(shù)資料
| 型號(hào)： | EE-SA103 |
| 元件分類： | 開關(guān) |
| 英文描述： | 3 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 237K |
| 代理商： | EE-SA103 |
332
Photomicrosensor (Actuator Mounted)
EE-SA103
Photomicrosensor (Actuator Mounted)
EE-SA103
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
I Features
An actuator can be attached.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25
°C.
2. The pulse width is 10
s maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
I Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No.
Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions
Tolerance
3 mm max.
±0.3
3
< mm ≤ 6
±0.375
6
< mm ≤ 10
±0.45
10
< mm ≤ 18
±0.55
18
< mm ≤ 30
±0.65
Four, 0.5
Four, 0.25
Two, 0.5
Four, C0.3
0.25 max.
0.3 max.
1.6
+0.05
0
dia.
1.2
+0.05
0
dia.
Optical
axis
Cross section BB
Cross section AA
Part C
0.3
±0.1
1
±0.08
0.3
±0.1
0.3
±0.1
9.3
±1
6.75
±0.2
6
±0.15
0.3
±0.1
2.3
Unless otherwise specified, the
tolerances are as shown below.
Item
Symbol
Rated value
Emitter
Forward current
I
F
50 mA (see note 1)
Pulse forward
current
I
FP
1 A (see note 2)
Reverse voltage
V
R
4 V
Detector
Collector–Emitter
voltage
V
CEO
30 V
Emitter–Collector
voltage
V
ECO
---
Collector current
I
C
20 mA
Collector
dissipation
P
C
100 mW (see note 1)
Ambient
temperature
Operating
Topr
–25
°C to 85°C
Storage
Tstg
–30
°C to 100°C
Soldering temperature
Tsol
260
°C (see note 3)
Description
Model
Photomicrosensor (actuator mounted)
EE-SA103
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F = 30 mA
Reverse current
I
R
0.01
A typ., 10 A max.
V
R = 4 V
Peak emission wavelength
λ
P
940 nm typ.
I
F = 20 mA
Detector
Light current
I
L
0.5 mA min., 14 mA max.
I
F = 20 mA, VCE = 10 V
Dark current
I
D
2 nA typ., 200 nA max.
V
CE = 10 V, 0 lx
Leakage current
I
LEAK
---
Collector–Emitter saturated
voltage
V
CE (sat)
0.1 V typ., 0.4 V max.
I
F = 20 mA, IL = 0.1 mA
Peak spectral sensitivity
wavelength
λ
P
850 nm typ.
V
CE = 10 V
Rising time
tr
4
s typ.
V
CC = 5 V, RL = 100 , IL = 5 mA
Falling time
tf
4
s typ.
V
CC = 5 V, RL = 100 , IL = 5 mA
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