參數(shù)資料
型號(hào): EE-SA103
廠商: Omron Electronics Inc-EMC Div
文件頁數(shù): 1/4頁
文件大?。?/td> 237K
描述: SENSOR OPTO SLOT 3MM TRANS THRU
標(biāo)準(zhǔn)包裝: 25
檢測(cè)距離: 0.118"(3mm)
檢測(cè)方法: 可傳導(dǎo)的
輸出配置: 光電晶體管
電流 - DC 正向(If): 50mA
電流 - 集電極 (Ic)(最大): 20mA
電壓 - 集電極發(fā)射極擊穿(最大): 30V
響應(yīng)時(shí)間: 4µs,4µs
安裝類型: 通孔
封裝/外殼: PCB 安裝
包裝: 散裝
類型: 無放大
工作溫度: -25°C ~ 85°C
其它名稱: EESA103
EESA1038B
EESA103Q
332    Photomicrosensor (Actuator Mounted) EE-SA103
Photomicrosensor (Actuator Mounted)
EE-SA103
I Dimensions
Note:All units are in millimeters unless otherwise indicated.
I Features
"An actuator can be attached.
"PCB mounting type.
"High resolution with a 0.5-mm-wide aperture.
"RoHS Compliant.
I Absolute Maximum Ratings (Ta=25?SPAN class="pst EE-SA103_2586709_6">C)
Note:1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2. The pulse width is 10 ?/SPAN>s maximum with a frequency of 100Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
I Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SA103_2586709_6">C)
Internal Circuit
K
A
C
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions Tolerance
3 mm max.    
?.3
3 < mm d 6    
?.375
6 < mm d 10        ?.45
10 < mm d 18       ?.55
18 < mm d 30       ?.65
Four, 0.5
Four, 0.25
Two, 0.5
Four, C0.3
0.25 max.
0.3 max.
1.6
+0.05
 0 dia.
1.2
+0.05
 0 dia.
Optical
axis
Cross section BB
Cross section AA
Part C
0.3?.1
1?.08
0.3?.1
0.3?.1
9.3?
6.75?.2
6?.15
0.3?.1
2.3
Unless otherwise specified, the
tolerances are as shown below.
Item
Symbol   Rated value
Emitter   Forward current  I
F
50 mA (seenote 1)
Pulse forward
current
I
FP
1 A (seenote2)
Reverse voltage  V
R
4 V
Detector   CollectorEmitter
voltage
V
CEO
30 V
EmitterCollector
voltage
V
ECO
---
Collector current  I
C
20 mA
Collector
dissipation
P
C
100 mW (seenote 1)
Ambient
temperature
Operating
Topr   25癈 to 85癈
Storage
Tstg   30癈 to 100癈
Soldering temperature
Tsol   260癈 (see note 3)
Description
Model
Photomicrosensor (actuator mounted) EE-SA103
Item
Symbol
Value
Condition
Emitter    Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F
 = 30 mA
Reverse current
I
R
0.01 礎(chǔ) typ., 10 礎(chǔ) max.
V
R
 = 4 V
Peak emission wavelength
?/DIV>
P
940 nm typ.
I
F
 = 20 mA
Detector   Light current
I
L
0.5 mA min., 14 mA max.
I
F
 = 20 mA, V
CE
 = 10 V
Dark current
I
D
2 nA typ., 200 nA max.
V
CE
 = 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated
voltage
V
CE
 (sat)    0.1 V typ., 0.4 V max.
I
F
 = 20 mA, I
L
 = 0.1 mA
Peak spectral sensitivity
wavelength
?/DIV>
P
850 nm typ.
V
CE
 = 10 V
Rising time
tr
4 祍 typ.
V
CC
 = 5 V, R
L
 = 100 &, I
L
 = 5 mA
Falling time
tf
4 祍 typ.
V
CC
 = 5 V, R
L
 = 100 &, I
L
 = 5 mA
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