- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384283 > EDS6416AHBH-6B-E (ELPIDA MEMORY INC) Circular Connector; No. of Contacts:39; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:21-39 RoHS Compliant: No PDF資料下載
參數(shù)資料
| 型號(hào)： | EDS6416AHBH-6B-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Circular Connector; No. of Contacts:39; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:21-39 RoHS Compliant: No |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 |
| 封裝： | ROHS COMPLIANT, FBGA-60 |
| 文件頁(yè)數(shù)： | 1/49頁(yè) |
| 文件大?。?/td> | 716K |
| 代理商： | EDS6416AHBH-6B-E |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)
Document No. E0442E40 (Ver. 4.0)
Date Published June 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2004-2005
DATA SHEET
64M bits SDRAM
EDS6416AHBH, EDS6416CHBH
(4M words
×
16 bits)
Description
The EDS6416AHBH, EDS6416CHBH are 64M bits
SDRAMs organized as 1,048,576 words
×
16 bits
×
4
banks. All inputs and outputs are synchronized with
the positive edge of the clock.
Supply voltages are 3.3V (EDS6416AHBH) and 2.5V
(EDS6416CHBH).
It is packaged in 60-ball FBGA.
Features
3.3V and 2.5V power supply
Clock frequency: 166MHz/133MHz (max.)
Single pulsed /RAS
×
16 organization
4 banks can operate simultaneously and
independently
Burst read/write operation and burst read/single
write operation capability
2 variations of burst sequence
Sequential (BL = 1, 2, 4, 8, full page)
Interleave (BL = 1, 2, 4, 8)
Programmable /CAS latency (CL): 2, 3
Byte control by UDQM and LDQM
Refresh cycles: 4096 refresh cycles/64ms
2 variations of refresh
Auto refresh
Self refresh
FBGA package with lead free solder (Sn-Ag-Cu)
RoHS compliant
Pin Configurations
/xxx indicate active low signal.
VSS
1
A
B
C
D
E
F
G
H
J
K
L
M
N
2
3
4
5
6
7
DQ14
DQ13
DQ12
DQ10
DQ9
DQ8
NC
NC
DQ15
VSSQ
VDDQ
DQ11
VSSQ
VDDQ
NC
VSS
UDQM
DQ0
VDDQ
VSSQ
DQ4
VDDQ
VSSQ
NC
VDD
LDQM
VDD
DQ1
DQ2
DQ3
DQ5
DQ6
DQ7
NC
/WE
NC
CKE
A11
A8
CLK
NC
A9
A7
/RAS
NC
BA1
A0
/CAS
/CS
BA0
A10
P
R
A6
VSS
A5
A4
A2
A3
A1
VDD
(Top view)
60-ball FBGA
A0 to A11
BA0, BA1
DQ0 to DQ15
/CS
/RAS
/CAS
/WE
LDQM, UDQM
Address input
Bank select address
Data-input/output
Chip select
Row address strobe
Column address strobe
Write enable
Input/output mask
CKE
CLK
VDD
VSS
VDDQ
VSSQ
NC
Clock enable
Clock input
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDS6416AHBH-75-E | 64M bits SDRAM (4M words x 16 bits) |
| EDS6432AFTA-75TI-E | 64M bits SDRAM WTR (Wide Temperature Range) |
| EDX5116ABSE-3B-E | 512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE-2A-E | 512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE-3A-E | 512M bits XDR DRAM (32M words ?16 bits) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS6416AHBH-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHBH-75TT-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM WTR (Wide Temperature Range) |
| EDS6416AHBH-TT | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM WTR (Wide Temperature Range) |
| EDS6416AHTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHTA-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。