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參數(shù)資料
| 型號(hào)： | EDI8L21664V |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | External SRAM Memory Solution |
| 中文描述： | 外部SRAM記憶體解決方案 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 74K |
| 代理商： | EDI8L21664V |
EDI8L21664V
2x64Kx16 SRAM
1
EDI8L21664V Rev. 0 1/98 ECO #9704
Features
DSP Memory Solution
Texas Instruments TMS320C54x
3.3V Operating Supply Voltage
Access Times of 10, 12 and 15ns
Single Write Control and Output Enable Lines
One Chip Enable Line per Memory Bank
50% Space Savings vs. Monolithic TSOPs
Upgrade Path Available in Same Footprint
Multiple VCC and VSS Pins
Reduced Inductance and Capacitance
74 pin BGA, JEDEC MO-151
The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM
constructed with two 64Kx16 die mounted on a multi-
layer lamnate substrate. The device is packaged in a 74
lead, 15mmby 15mm BGA.
Operating with a 3.3V power supply and with access
times as fast as 10ns, the device allows the user to
develop a fast external memory for Texas Instuments'
TMS320C54x DSP.
The device consists of two separate banks of 64Kx16 of
memory. Each bank has a separate Chip Enable pin and
higher order address select pin. Bank 'A' is controlled
using CE1\ and A15A. Bank 'B' is controlled using CE2\
and A15B. The two banks have common I/Os (DQ0-15)
and control lines (WE\ and G\).
TMS320C54x External SRAM
Memory Solution
Pin Configurations
VSS
VSS
VSS
VSS
VSS
A15A CE1\
N/C
VSS
VSS
VSS
A15B
VCC
VCC
VSS
VSS
VSS
VCC
VCC
DQ15 DQ14
VSS
VCC
VCC
VCC
DQ13 DQ11
DQ12 DQ10
DQ9
DQ4
DQ8
VCC
VSS
VSS
VSS
DQ3
DQ5
DQ6
DQ2
A0
A3
N/C
VCC
VCC
VCC
VCC
DQ7
DQ0
DQ1
N\C
G\
A1
VSS
WE\
CE2\
A14
A12
A13
VCC
VSS
VSS
VCC
VCC
A10
A11
A8
A9
A6
A7
A4
VSS
A2
A5
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
A
B
C
D
E
F
G
H
J
K
L
Electronic Designs Incorporated
One Research Drive Westborough, MA 01581 USA 508-366-5151 FAX 508-836-4850
http://www.electronic-designs.com
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